Origin of dual epitaxy in the growth of CdTe on (211)GaAs

Y. Nakamura; N. Otsuka; M.D. Lange; Robert Sporken; J.P.  Faurie

doi:10.1063/1.107294

Origin of dual epitaxy in the growth of CdTe on (211)GaAs

Y. Nakamura, N. Otsuka, M.D. Lange, Robert Sporken, J.P. Faurie

Research output: Contribution to journal › Article › peer-review

Abstract

The atomic structure of the (1̄3̄3̄)CdTe/(2̄1̄1̄)GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on (2̄1̄1̄)GaAs by molecular beam epitaxy. The analysis shows that the lattice mismatch at the interface is accommodated by a novel mechanism, which occurs with the combination of the 14.6% lattice mismatch between CdTe and GaAs and one wurtzite type bond sequence on the (2̄1̄1̄) substrate surface.

Original language	English
Pages (from-to)	1371-1374
Journal	Applied Physics Letters
Volume	60
Issue number	11
DOIs	https://doi.org/10.1063/1.107294
Publication status	Published - 1992

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title = "Origin of dual epitaxy in the growth of CdTe on (211)GaAs",

abstract = "The atomic structure of the ({\=1}{\=3}{\=3})CdTe/({\=2}{\=1}{\=1})GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on ({\=2}{\=1}{\=1})GaAs by molecular beam epitaxy. The analysis shows that the lattice mismatch at the interface is accommodated by a novel mechanism, which occurs with the combination of the 14.6% lattice mismatch between CdTe and GaAs and one wurtzite type bond sequence on the ({\=2}{\=1}{\=1}) substrate surface.",

author = "Y. Nakamura and N. Otsuka and M.D. Lange and Robert Sporken and J.P. Faurie",

year = "1992",

doi = "10.1063/1.107294",

language = "English",

volume = "60",

pages = "1371--1374",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

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TY - JOUR

T1 - Origin of dual epitaxy in the growth of CdTe on (211)GaAs

AU - Nakamura, Y.

AU - Otsuka, N.

AU - Lange, M.D.

AU - Sporken, Robert

AU - Faurie, J.P.

PY - 1992

Y1 - 1992

N2 - The atomic structure of the (1̄3̄3̄)CdTe/(2̄1̄1̄)GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on (2̄1̄1̄)GaAs by molecular beam epitaxy. The analysis shows that the lattice mismatch at the interface is accommodated by a novel mechanism, which occurs with the combination of the 14.6% lattice mismatch between CdTe and GaAs and one wurtzite type bond sequence on the (2̄1̄1̄) substrate surface.

AB - The atomic structure of the (1̄3̄3̄)CdTe/(2̄1̄1̄)GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on (2̄1̄1̄)GaAs by molecular beam epitaxy. The analysis shows that the lattice mismatch at the interface is accommodated by a novel mechanism, which occurs with the combination of the 14.6% lattice mismatch between CdTe and GaAs and one wurtzite type bond sequence on the (2̄1̄1̄) substrate surface.

U2 - 10.1063/1.107294

DO - 10.1063/1.107294

M3 - Article

SN - 0003-6951

VL - 60

SP - 1371

EP - 1374

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Origin of dual epitaxy in the growth of CdTe on (211)GaAs

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