Optimisation and simulation of an alternative nano-flash memory: The SASEM device

C. Krzeminski, E. Dubois, X. Tang, N. Reckinger, A. Crahay, V. Bayot

Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

Abstract

Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated. © 2005 Materials Research Society.
Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceeding
Pages45-50
Number of pages6
Volume830
Publication statusPublished - 1 Jan 2005

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Krzeminski, C., Dubois, E., Tang, X., Reckinger, N., Crahay, A., & Bayot, V. (2005). Optimisation and simulation of an alternative nano-flash memory: The SASEM device. In Materials Research Society Symposium Proceeding (Vol. 830, pp. 45-50)