Optics-free lithography on colloidal nanocrystal assemblies

Santosh Shaw; Kyle J. Miller; Julien L. Colaux; Ludovico Cademartiri

doi:10.1117/12.2218792

Optics-free lithography on colloidal nanocrystal assemblies

Santosh Shaw, Kyle J. Miller, Julien L. Colaux, Ludovico Cademartiri

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Abstract

We describe a lithographic approach - Nanocrystal Plasma Polymerization (NPP)-based lithography (Figure 1) - where colloidal nanocrystal assemblies (CNAs) are used as the resist and, potentially, the active material. The patterning process is based on a change in the dispersibility of the CNAs in solvents as a result of the exposure to plasmas. Plasmas can etch the capping ligands from the exposed area. During the development step, the unexposed area of CNAs are redispersed leaving behind the patterned area.

Original language	English
Title of host publication	Advances in Patterning Materials and Processes XXXIII
Publisher	SPIE
Volume	9779
ISBN (Electronic)	9781510600140
DOIs	https://doi.org/10.1117/12.2218792
Publication status	Published - 2016
Externally published	Yes
Event	Advances in Patterning Materials and Processes XXXIII - San Jose, United States Duration: 22 Feb 2016 → 25 Feb 2016

Conference

Conference	Advances in Patterning Materials and Processes XXXIII
Country/Territory	United States
City	San Jose
Period	22/02/16 → 25/02/16

Keywords

Colloids
Lithography
Nanocrystal plasma polymerization
Nanoparticles
Optics-free
Plasma
Self-assembly

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10.1117/12.2218792

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title = "Optics-free lithography on colloidal nanocrystal assemblies",

abstract = "We describe a lithographic approach - Nanocrystal Plasma Polymerization (NPP)-based lithography (Figure 1) - where colloidal nanocrystal assemblies (CNAs) are used as the resist and, potentially, the active material. The patterning process is based on a change in the dispersibility of the CNAs in solvents as a result of the exposure to plasmas. Plasmas can etch the capping ligands from the exposed area. During the development step, the unexposed area of CNAs are redispersed leaving behind the patterned area.",

keywords = "Colloids, Lithography, Nanocrystal plasma polymerization, Nanoparticles, Optics-free, Plasma, Self-assembly",

author = "Santosh Shaw and Miller, {Kyle J.} and Colaux, {Julien L.} and Ludovico Cademartiri",

year = "2016",

doi = "10.1117/12.2218792",

language = "English",

volume = "9779",

booktitle = "Advances in Patterning Materials and Processes XXXIII",

publisher = "SPIE",

note = "Advances in Patterning Materials and Processes XXXIII ; Conference date: 22-02-2016 Through 25-02-2016",

}

TY - GEN

T1 - Optics-free lithography on colloidal nanocrystal assemblies

AU - Shaw, Santosh

AU - Miller, Kyle J.

AU - Colaux, Julien L.

AU - Cademartiri, Ludovico

PY - 2016

Y1 - 2016

N2 - We describe a lithographic approach - Nanocrystal Plasma Polymerization (NPP)-based lithography (Figure 1) - where colloidal nanocrystal assemblies (CNAs) are used as the resist and, potentially, the active material. The patterning process is based on a change in the dispersibility of the CNAs in solvents as a result of the exposure to plasmas. Plasmas can etch the capping ligands from the exposed area. During the development step, the unexposed area of CNAs are redispersed leaving behind the patterned area.

AB - We describe a lithographic approach - Nanocrystal Plasma Polymerization (NPP)-based lithography (Figure 1) - where colloidal nanocrystal assemblies (CNAs) are used as the resist and, potentially, the active material. The patterning process is based on a change in the dispersibility of the CNAs in solvents as a result of the exposure to plasmas. Plasmas can etch the capping ligands from the exposed area. During the development step, the unexposed area of CNAs are redispersed leaving behind the patterned area.

KW - Colloids

KW - Lithography

KW - Nanocrystal plasma polymerization

KW - Nanoparticles

KW - Optics-free

KW - Plasma

KW - Self-assembly

UR - http://www.scopus.com/inward/record.url?scp=84974577937&partnerID=8YFLogxK

U2 - 10.1117/12.2218792

DO - 10.1117/12.2218792

M3 - Conference contribution

AN - SCOPUS:84974577937

VL - 9779

BT - Advances in Patterning Materials and Processes XXXIII

PB - SPIE

T2 - Advances in Patterning Materials and Processes XXXIII

Y2 - 22 February 2016 through 25 February 2016

ER -

Optics-free lithography on colloidal nanocrystal assemblies

Abstract

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Keywords

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