Multitechnique characterisation of Al2O3 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

Laurent Houssiau; Roumen Vitchev; Jean-Jacques Pireaux; Thierry Conard; H. Bender; O. Richard; P. Mack; J. Wolstenholme; Chr. Defranoux

Multitechnique characterisation of Al₂O₃ thin layers deposited on SiO₂/Si surface by atomic layer chemical vapour deposition

Laurent Houssiau, Roumen Vitchev, Jean-Jacques Pireaux, Thierry Conard, H. Bender, O. Richard, P. Mack, J. Wolstenholme, Chr. Defranoux

Namur Research Institute for Life Sciences

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	36-38
Number of pages	3
Journal	Proceedings of the AVS Fourth International Conference on Microelectronics and Interfaces
Publication status	Published - 2003

Cite this

@article{d372b715195046a48eae6d55b31b308b,

title = "Multitechnique characterisation of Al2O3 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition",

author = "Laurent Houssiau and Roumen Vitchev and Jean-Jacques Pireaux and Thierry Conard and H. Bender and O. Richard and P. Mack and J. Wolstenholme and Chr. Defranoux",

year = "2003",

language = "English",

pages = "36--38",

journal = "Proceedings of the AVS Fourth International Conference on Microelectronics and Interfaces",

}

TY - JOUR

T1 - Multitechnique characterisation of Al2O3 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

AU - Houssiau, Laurent

AU - Vitchev, Roumen

AU - Pireaux, Jean-Jacques

AU - Conard, Thierry

AU - Bender, H.

AU - Richard, O.

AU - Mack, P.

AU - Wolstenholme, J.

AU - Defranoux, Chr.

PY - 2003

Y1 - 2003

M3 - Article

SP - 36

EP - 38

JO - Proceedings of the AVS Fourth International Conference on Microelectronics and Interfaces

JF - Proceedings of the AVS Fourth International Conference on Microelectronics and Interfaces

ER -