Modifications by rare gas bombardment of aluminium nitride formed by direct implantation

S. Lucas, F. Bodart, G. Terwagne, G. Sorensen, H. Jensen

Research output: Contribution to journalArticle

Abstract

It is well known that nitrogen implantation into aluminium increases the hardness of the aluminium surface owing to the formation of crystalline aluminium nitride. In order to enhance the thickness of the aluminium nitride formed during nitrogen implantation in pure aluminium, the samples were implanted with N ions successively at different energies between 100 and 320 keV. The implanted specimens were investigated by nuclear reaction analysis, Rutherford backscattering spectroscopy and scanning electron microscopy. Post-irradiations with Kr ions at doses of 1 × 10 ions cm and an energy of 500 keV were performed, and it was shown that the krypton ion bombardment redistributed the implanted nitrogen; so a more homogenous aluminium nitride layer was formed. © 1989.
Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalMaterials science and engineering. B
Volume2
Issue number1-3
Publication statusPublished - 1 Feb 1989

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Noble Gases
Aluminum nitride
aluminum nitrides
Inert gases
Aluminum
bombardment
rare gases
implantation
Nitrogen
Ions
aluminum
nitrogen
Krypton
ions
Nuclear reactions
Rutherford backscattering spectroscopy
Ion bombardment
Dosimetry
krypton
Hardness

Cite this

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Modifications by rare gas bombardment of aluminium nitride formed by direct implantation. / Lucas, S.; Bodart, F.; Terwagne, G.; Sorensen, G.; Jensen, H.

In: Materials science and engineering. B, Vol. 2, No. 1-3, 01.02.1989, p. 183-187.

Research output: Contribution to journalArticle

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