Metal/GaN contacts studied by electron spectroscopies

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    Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

    Original languageEnglish
    Pages (from-to)1-6
    Number of pages6
    JournalMaterials Research Society Symposium Proceedings
    Issue numberW11.79
    Publication statusPublished - 2000


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