Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation

M. K. Weldon; V. E. Marsico; Y. J. Chabal; M. Collot; Y. Caudano; S. B. Christman; E. E. Chaban; D. C. Jacobson; W. L. Brown; J. Sapjeta; C. M. Hsieh; C. A. Goodwin; A. Agarwal; V. C. Venezia; T. E. Haynes; W. B. Jackson

Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation

M. K. Weldon, V. E. Marsico, Y. J. Chabal, M. Collot, Y. Caudano, S. B. Christman, E. E. Chaban, D. C. Jacobson, W. L. Brown, J. Sapjeta, C. M. Hsieh, C. A. Goodwin, A. Agarwal, V. C. Venezia, T. E. Haynes, W. B. Jackson

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Abstract

Different hydrogen implantation conditions as well as co-implantation of various elemental species are used to study the different exfoliation mechanisms. Substantial differences between the concentration/thermal evolution of the bound hydrogen of pure H-implantation and He/H co-implantation are shown. For co-implantation, the initial concentration of Si-H species decreased compared to pure H-implantation. The balance of implanted hydrogen must be in the form of molecular hydrogen that is invisible to infrared radiation.

Original language	English
Title of host publication	IEEE International SOI Conference
Editors	Anon
Publisher	IEEE
Pages	124-125
Number of pages	2
Publication status	Published - 1997
Event	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, United States Duration: 6 Oct 1997 → 9 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE International SOI Conference
Country/Territory	United States
City	Fish Camp
Period	6/10/97 → 9/10/97

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Weldon, M. K., Marsico, V. E., Chabal, Y. J., Collot, M., Caudano, Y., Christman, S. B., Chaban, E. E., Jacobson, D. C., Brown, W. L., Sapjeta, J., Hsieh, C. M., Goodwin, C. A., Agarwal, A., Venezia, V. C., Haynes, T. E., & Jackson, W. B. (1997). Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation. In Anon (Ed.), IEEE International SOI Conference (pp. 124-125). IEEE.

@inproceedings{20f8456fdfb242d39290a0263e034a18,

title = "Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation",

abstract = "Different hydrogen implantation conditions as well as co-implantation of various elemental species are used to study the different exfoliation mechanisms. Substantial differences between the concentration/thermal evolution of the bound hydrogen of pure H-implantation and He/H co-implantation are shown. For co-implantation, the initial concentration of Si-H species decreased compared to pure H-implantation. The balance of implanted hydrogen must be in the form of molecular hydrogen that is invisible to infrared radiation.",

author = "Weldon, {M. K.} and Marsico, {V. E.} and Chabal, {Y. J.} and M. Collot and Y. Caudano and Christman, {S. B.} and Chaban, {E. E.} and Jacobson, {D. C.} and Brown, {W. L.} and J. Sapjeta and Hsieh, {C. M.} and Goodwin, {C. A.} and A. Agarwal and Venezia, {V. C.} and Haynes, {T. E.} and Jackson, {W. B.}",

year = "1997",

language = "English",

pages = "124--125",

editor = "Anon",

booktitle = "IEEE International SOI Conference",

publisher = "IEEE",

note = "Proceedings of the 1997 IEEE International SOI Conference ; Conference date: 06-10-1997 Through 09-10-1997",

}

Weldon, MK, Marsico, VE, Chabal, YJ, Collot, M, Caudano, Y, Christman, SB, Chaban, EE, Jacobson, DC, Brown, WL, Sapjeta, J, Hsieh, CM, Goodwin, CA, Agarwal, A, Venezia, VC, Haynes, TE & Jackson, WB 1997, Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation. in Anon (ed.), IEEE International SOI Conference. IEEE, pp. 124-125, Proceedings of the 1997 IEEE International SOI Conference, Fish Camp, California, United States, 6/10/97.

TY - GEN

T1 - Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation

AU - Weldon, M. K.

AU - Marsico, V. E.

AU - Chabal, Y. J.

AU - Collot, M.

AU - Caudano, Y.

AU - Christman, S. B.

AU - Chaban, E. E.

AU - Jacobson, D. C.

AU - Brown, W. L.

AU - Sapjeta, J.

AU - Hsieh, C. M.

AU - Goodwin, C. A.

AU - Agarwal, A.

AU - Venezia, V. C.

AU - Haynes, T. E.

AU - Jackson, W. B.

PY - 1997

Y1 - 1997

N2 - Different hydrogen implantation conditions as well as co-implantation of various elemental species are used to study the different exfoliation mechanisms. Substantial differences between the concentration/thermal evolution of the bound hydrogen of pure H-implantation and He/H co-implantation are shown. For co-implantation, the initial concentration of Si-H species decreased compared to pure H-implantation. The balance of implanted hydrogen must be in the form of molecular hydrogen that is invisible to infrared radiation.

AB - Different hydrogen implantation conditions as well as co-implantation of various elemental species are used to study the different exfoliation mechanisms. Substantial differences between the concentration/thermal evolution of the bound hydrogen of pure H-implantation and He/H co-implantation are shown. For co-implantation, the initial concentration of Si-H species decreased compared to pure H-implantation. The balance of implanted hydrogen must be in the form of molecular hydrogen that is invisible to infrared radiation.

UR - http://www.scopus.com/inward/record.url?scp=0031337196&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031337196

SP - 124

EP - 125

BT - IEEE International SOI Conference

A2 - Anon, null

PB - IEEE

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation

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