Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, D.A. Yarekha, Emmanuel Dubois, N. Breil, Nicolas Reckinger, Xiaohui Tang, A. Halimaoui

Research output: Contribution to conferenceAbstract

Scientific committee

Scientific committee215th Electrochemical Society Meeting
CountryUnited States
CitySan Francisco
Period24/05/0929/05/09

Cite this

Larrieu, G., Yarekha, D. A., Dubois, E., Breil, N., Reckinger, N., Tang, X., & Halimaoui, A. (2009). Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. Abstract from 215th Electrochemical Society Meeting, San Francisco, United States.
Larrieu, G. ; Yarekha, D.A. ; Dubois, Emmanuel ; Breil, N. ; Reckinger, Nicolas ; Tang, Xiaohui ; Halimaoui, A./ Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. Abstract from 215th Electrochemical Society Meeting, San Francisco, United States.
@conference{76d325fa9d5e495aab2fc21009d88ef7,
title = "Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs",
author = "G. Larrieu and D.A. Yarekha and Emmanuel Dubois and N. Breil and Nicolas Reckinger and Xiaohui Tang and A. Halimaoui",
year = "2009",
language = "English",
note = "215th Electrochemical Society Meeting ; Conference date: 24-05-2009 Through 29-05-2009",

}

Larrieu, G, Yarekha, DA, Dubois, E, Breil, N, Reckinger, N, Tang, X & Halimaoui, A 2009, 'Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs' 215th Electrochemical Society Meeting, San Francisco, United States, 24/05/09 - 29/05/09, .

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. / Larrieu, G.; Yarekha, D.A.; Dubois, Emmanuel; Breil, N.; Reckinger, Nicolas; Tang, Xiaohui; Halimaoui, A.

2009. Abstract from 215th Electrochemical Society Meeting, San Francisco, United States.

Research output: Contribution to conferenceAbstract

TY - CONF

T1 - Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

AU - Larrieu,G.

AU - Yarekha,D.A.

AU - Dubois,Emmanuel

AU - Breil,N.

AU - Reckinger,Nicolas

AU - Tang,Xiaohui

AU - Halimaoui,A.

PY - 2009

Y1 - 2009

M3 - Abstract

ER -

Larrieu G, Yarekha DA, Dubois E, Breil N, Reckinger N, Tang X et al. Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs. 2009. Abstract from 215th Electrochemical Society Meeting, San Francisco, United States.