Ionoluminescence induced by low-energy proton excitation of Si nanocrystals embedded in silica

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Abstract

Silicon nanocrystals (Si-nc) can be synthesized into a silica matrix by ion implantation of silicon excess, followed by thermal annealing in N or Ar atmosphere. In this work, ionoluminescence (IL) measurements have been performed on fused silica samples containing Si-nc using a 18 keV proton beam for the IL excitation. This low energy irradiation has allowed us to reduce the IL probing range to the first 300 nm of the studied materials, thus enhancing the contribution to the IL signal of the sample region where the Si-nc are located. A transmission optical detection set-up has been developed to ensure the collection of a strong IL signal. Comparison of the data recorded between 300 and 800 nm shows that the IL intensity decreases for long excitation times in Si-nc samples, whereas the IL signal intensity remains remarkably stable in pure SiO sample. The variations observed for samples with Si-nc are attributed to the damaging effects induced by the impinging protons. The sample annealed under N exhibits a stronger IL emission than the sample annealed under Ar, where both the concentration of residual defects and the excitation efficiency of the radiative centers could be lower. The results make the IL measurements a promising tool for in situ monitoring of ion implantation with pure fused silica samples, as well as a promising technique for novel characterizations of Si-nc embedded within SiO . © 2011 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalNuclear Instruments and Methods in Physics B
Volume272
DOIs
Publication statusPublished - 1 Feb 2012

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proton energy
Nanocrystals
nanocrystals
Protons
Silica
silicon dioxide
Silicon
silicon
excitation
Fused silica
Ion implantation
ion implantation
Proton beams
Light transmission
proton beams
Irradiation
Annealing
Defects
Monitoring
atmospheres

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title = "Ionoluminescence induced by low-energy proton excitation of Si nanocrystals embedded in silica",
abstract = "Silicon nanocrystals (Si-nc) can be synthesized into a silica matrix by ion implantation of silicon excess, followed by thermal annealing in N or Ar atmosphere. In this work, ionoluminescence (IL) measurements have been performed on fused silica samples containing Si-nc using a 18 keV proton beam for the IL excitation. This low energy irradiation has allowed us to reduce the IL probing range to the first 300 nm of the studied materials, thus enhancing the contribution to the IL signal of the sample region where the Si-nc are located. A transmission optical detection set-up has been developed to ensure the collection of a strong IL signal. Comparison of the data recorded between 300 and 800 nm shows that the IL intensity decreases for long excitation times in Si-nc samples, whereas the IL signal intensity remains remarkably stable in pure SiO sample. The variations observed for samples with Si-nc are attributed to the damaging effects induced by the impinging protons. The sample annealed under N exhibits a stronger IL emission than the sample annealed under Ar, where both the concentration of residual defects and the excitation efficiency of the radiative centers could be lower. The results make the IL measurements a promising tool for in situ monitoring of ion implantation with pure fused silica samples, as well as a promising technique for novel characterizations of Si-nc embedded within SiO . {\circledC} 2011 Elsevier B.V. All rights reserved.",
author = "J. Demarche and D. Barba and G.G. Ross and G. Terwagne",
note = "Copyright 2012 Elsevier B.V., All rights reserved.",
year = "2012",
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doi = "10.1016/j.nimb.2011.01.051",
language = "English",
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T1 - Ionoluminescence induced by low-energy proton excitation of Si nanocrystals embedded in silica

AU - Demarche, J.

AU - Barba, D.

AU - Ross, G.G.

AU - Terwagne, G.

N1 - Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - Silicon nanocrystals (Si-nc) can be synthesized into a silica matrix by ion implantation of silicon excess, followed by thermal annealing in N or Ar atmosphere. In this work, ionoluminescence (IL) measurements have been performed on fused silica samples containing Si-nc using a 18 keV proton beam for the IL excitation. This low energy irradiation has allowed us to reduce the IL probing range to the first 300 nm of the studied materials, thus enhancing the contribution to the IL signal of the sample region where the Si-nc are located. A transmission optical detection set-up has been developed to ensure the collection of a strong IL signal. Comparison of the data recorded between 300 and 800 nm shows that the IL intensity decreases for long excitation times in Si-nc samples, whereas the IL signal intensity remains remarkably stable in pure SiO sample. The variations observed for samples with Si-nc are attributed to the damaging effects induced by the impinging protons. The sample annealed under N exhibits a stronger IL emission than the sample annealed under Ar, where both the concentration of residual defects and the excitation efficiency of the radiative centers could be lower. The results make the IL measurements a promising tool for in situ monitoring of ion implantation with pure fused silica samples, as well as a promising technique for novel characterizations of Si-nc embedded within SiO . © 2011 Elsevier B.V. All rights reserved.

AB - Silicon nanocrystals (Si-nc) can be synthesized into a silica matrix by ion implantation of silicon excess, followed by thermal annealing in N or Ar atmosphere. In this work, ionoluminescence (IL) measurements have been performed on fused silica samples containing Si-nc using a 18 keV proton beam for the IL excitation. This low energy irradiation has allowed us to reduce the IL probing range to the first 300 nm of the studied materials, thus enhancing the contribution to the IL signal of the sample region where the Si-nc are located. A transmission optical detection set-up has been developed to ensure the collection of a strong IL signal. Comparison of the data recorded between 300 and 800 nm shows that the IL intensity decreases for long excitation times in Si-nc samples, whereas the IL signal intensity remains remarkably stable in pure SiO sample. The variations observed for samples with Si-nc are attributed to the damaging effects induced by the impinging protons. The sample annealed under N exhibits a stronger IL emission than the sample annealed under Ar, where both the concentration of residual defects and the excitation efficiency of the radiative centers could be lower. The results make the IL measurements a promising tool for in situ monitoring of ion implantation with pure fused silica samples, as well as a promising technique for novel characterizations of Si-nc embedded within SiO . © 2011 Elsevier B.V. All rights reserved.

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