Investigation of interfaces by high resolution electron energy loss spectroscopy

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Abstract

Recent measurements performed on epitaxial layers clearly demonstrate the capability of HREELS to observe interface optical phonons in dielectric layered materials. Two examples are presented: First, the case of epitaxial CaF on Si(111) where the CaF interface phonon is detected for a whole range of CaF layer thicknesses. Discrepancies with theoretical predictions are interpreted as resulting from the residual strain in the CaF layers. The second example is a III-V semiconductor superlattice GaAs-AlGaAs in which an Al-As type interface mode is clearly identified and quantitatively interpreted by the dielectric theory.
Original languageEnglish
Pages (from-to)373-378
Number of pages6
JournalSurface Science
Volume189-190
Issue numberC
Publication statusPublished - 2 Oct 1987

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