Integration of low Schottky barrier source/drain for advanced MOS technology

Emmanuel Dubois, G. Larrieu, C. Krzeminski, X. Baie, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, E Robilliart, B. Froment, J. Ka̧tcki

    Research output: Contribution to conferenceAbstract

    Original languageEnglish
    Publication statusPublished - 2004
    EventIntegration of low Schottky barrier source/drain for advanced MOS technology - Athènes, Greece
    Duration: 4 Feb 20046 Feb 2004

    Scientific committee

    Scientific committeeIntegration of low Schottky barrier source/drain for advanced MOS technology
    CountryGreece
    CityAthènes
    Period4/02/046/02/04

    Cite this

    Dubois, E., Larrieu, G., Krzeminski, C., Baie, X., Tang, X., Reckinger, N., Bayot, V., Robilliart, E., Froment, B., & Ka̧tcki, J. (2004). Integration of low Schottky barrier source/drain for advanced MOS technology. Abstract from Integration of low Schottky barrier source/drain for advanced MOS technology, Athènes, Greece.