Integration of low Schottky barrier source/drain for advanced MOS technology

Emmanuel Dubois, G. Larrieu, C. Krzeminski, X. Baie, Xiaohui Tang, Nicolas Reckinger, Vincent Bayot, E Robilliart, B. Froment, J. Ka̧tcki

Research output: Contribution to conferenceAbstract

Scientific committee

Scientific committeeIntegration of low Schottky barrier source/drain for advanced MOS technology
CountryGreece
CityAthènes
Period4/02/046/02/04

Cite this

Dubois, E., Larrieu, G., Krzeminski, C., Baie, X., Tang, X., Reckinger, N., ... Ka̧tcki, J. (2004). Integration of low Schottky barrier source/drain for advanced MOS technology. Abstract from Integration of low Schottky barrier source/drain for advanced MOS technology, Athènes, Greece.
Dubois, Emmanuel ; Larrieu, G. ; Krzeminski, C. ; Baie, X. ; Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Robilliart, E ; Froment, B. ; Ka̧tcki, J./ Integration of low Schottky barrier source/drain for advanced MOS technology. Abstract from Integration of low Schottky barrier source/drain for advanced MOS technology, Athènes, Greece.
@conference{b0d265ecbf5a4b36a5cdd2e3005897bf,
title = "Integration of low Schottky barrier source/drain for advanced MOS technology",
author = "Emmanuel Dubois and G. Larrieu and C. Krzeminski and X. Baie and Xiaohui Tang and Nicolas Reckinger and Vincent Bayot and E Robilliart and B. Froment and J. Ka̧tcki",
year = "2004",
language = "English",
note = "Integration of low Schottky barrier source/drain for advanced MOS technology ; Conference date: 04-02-2004 Through 06-02-2004",

}

Dubois, E, Larrieu, G, Krzeminski, C, Baie, X, Tang, X, Reckinger, N, Bayot, V, Robilliart, E, Froment, B & Ka̧tcki, J 2004, 'Integration of low Schottky barrier source/drain for advanced MOS technology' Integration of low Schottky barrier source/drain for advanced MOS technology, Athènes, Greece, 4/02/04 - 6/02/04, .

Integration of low Schottky barrier source/drain for advanced MOS technology. / Dubois, Emmanuel; Larrieu, G.; Krzeminski, C.; Baie, X.; Tang, Xiaohui; Reckinger, Nicolas; Bayot, Vincent; Robilliart, E; Froment, B.; Ka̧tcki, J.

2004. Abstract from Integration of low Schottky barrier source/drain for advanced MOS technology, Athènes, Greece.

Research output: Contribution to conferenceAbstract

TY - CONF

T1 - Integration of low Schottky barrier source/drain for advanced MOS technology

AU - Dubois,Emmanuel

AU - Larrieu,G.

AU - Krzeminski,C.

AU - Baie,X.

AU - Tang,Xiaohui

AU - Reckinger,Nicolas

AU - Bayot,Vincent

AU - Robilliart,E

AU - Froment,B.

AU - Ka̧tcki,J.

PY - 2004

Y1 - 2004

M3 - Abstract

ER -

Dubois E, Larrieu G, Krzeminski C, Baie X, Tang X, Reckinger N et al. Integration of low Schottky barrier source/drain for advanced MOS technology. 2004. Abstract from Integration of low Schottky barrier source/drain for advanced MOS technology, Athènes, Greece.