InSb growth on Sb(111) single crystals studied by angle-resolved photoemission

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	1057-1061
Number of pages	5
Journal	Journal of vacuum science & technology. B, Microelectronics processing and phenomena
Volume	5
Issue number	4
Publication status	Published - 1987

Cite this

@article{7a17b27da2de458daae501089d730a5f,

title = "InSb growth on Sb(111) single crystals studied by angle-resolved photoemission",

author = "Robert Sporken and Pierre Louette and Roland Caudano and Jochen Barth and Jacques Ghijsen and Robert Johnson and Harald Richter",

year = "1987",

language = "English",

volume = "5",

pages = "1057--1061",

journal = "Journal of vacuum science & technology. B, Microelectronics processing and phenomena",

issn = "0734-211X",

publisher = "American institute of physics",

number = "4",

}

TY - JOUR

T1 - InSb growth on Sb(111) single crystals studied by angle-resolved photoemission

AU - Sporken, Robert

AU - Louette, Pierre

AU - Caudano, Roland

AU - Barth, Jochen

AU - Ghijsen, Jacques

AU - Johnson, Robert

AU - Richter, Harald

PY - 1987

Y1 - 1987

M3 - Article

SN - 0734-211X

VL - 5

SP - 1057

EP - 1061

JO - Journal of vacuum science & technology. B, Microelectronics processing and phenomena

JF - Journal of vacuum science & technology. B, Microelectronics processing and phenomena

IS - 4

ER -