INIS
oxygen
100%
films
100%
diffusion
100%
germanium
100%
atoms
57%
silicon oxides
42%
layers
28%
x-ray diffraction
28%
rutherford backscattering spectroscopy
28%
x-ray photoelectron spectroscopy
28%
environment
14%
asymmetry
14%
mobility
14%
size
14%
ions
14%
depth
14%
silicon
14%
stoichiometry
14%
dispersions
14%
annealing
14%
defects
14%
oxygen 16
14%
recoils
14%
saturation
14%
nanocrystals
14%
raman spectroscopy
14%
Medicine and Dentistry
X Ray Diffraction
100%
Rutherford Backscattering Spectrometry
100%
X Ray Photoemission Spectroscopy
100%
Silicon Dioxide
100%
Oxygen
50%
Raman Spectrometry
50%
Engineering
Ray Diffraction
100%
Ray Photoelectron Spectroscopy
100%
Depth Profile
50%
Chemical Environment
50%
Oxygen Atom
50%
Silicon Atom
50%
Induced Defect
50%
Keyphrases
Nanoclustering
100%
Oxygen Influence
100%
Size Dispersion
16%
Atomic Recoil
16%
Environment Influence
16%
GeOx
16%
Implantation Induced Defects
16%
GeO2
16%
Material Science
Film
100%
Germanium
100%
X-Ray Diffraction
28%
X-Ray Photoelectron Spectroscopy
28%
Nanocrystalline Material
14%
Silicon
14%
Raman Spectroscopy
14%