Abstract
Despite their application potential, the structure of CVD grown MoSe2 single layers remained relatively unexplored. Here we report the rotationally aligned CVD growth of MoSe2 single layers on graphite. Such MoSe2 layers are characterized by grain boundary structures with significantly reduced disorder and display a much lower grain boundary density compared to samples grown by MBE. We show that the grain boundaries of CVD MoSe2 on graphite are predominantly mirror twin boundaries (MTBs) and distinguish two classes of such MTBs based on their orientation relative to the zigzag directions of the MoSe2 lattice. By combining atomic resolution scanning tunneling microscopy (STM) and spectroscopy measurements with DFT calculations, we demonstrate that the predominantly present MTBs running along zigzag directions only slightly perturb the electronic structure of the MoSe2 sheet. This enables the CVD growth of large-area MoSe2 layers with high structural and electronic quality. Atomic resolution STM investigations also revealed a high density (1012 cm-2) of native point defects identified as Mo vacancies. Our DFT calculations predict that Mo vacancies in MoSe2 are magnetic, and their magnetic moment can be efficiently controlled electrically by tuning the Fermi level position.
| Original language | English |
|---|---|
| Pages (from-to) | 24855-24864 |
| Number of pages | 10 |
| Journal | Journal of Physical Chemistry C |
| Volume | 123 |
| Issue number | 40 |
| DOIs | |
| Publication status | Published - 10 Oct 2019 |
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Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers. / Koós, Antal A.; Vancsó, Péter; Szendrö, Márton; Dobrik, Gergely; Antognini Silva, David; Popov, Zakhar I.; Sorokin, Pavel B.; Henrard, Luc; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente.
In: Journal of Physical Chemistry C, Vol. 123, No. 40, 10.10.2019, p. 24855-24864.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers
AU - Koós, Antal A.
AU - Vancsó, Péter
AU - Szendrö, Márton
AU - Dobrik, Gergely
AU - Antognini Silva, David
AU - Popov, Zakhar I.
AU - Sorokin, Pavel B.
AU - Henrard, Luc
AU - Hwang, Chanyong
AU - Biró, László P.
AU - Tapasztó, Levente
PY - 2019/10/10
Y1 - 2019/10/10
N2 - Despite their application potential, the structure of CVD grown MoSe2 single layers remained relatively unexplored. Here we report the rotationally aligned CVD growth of MoSe2 single layers on graphite. Such MoSe2 layers are characterized by grain boundary structures with significantly reduced disorder and display a much lower grain boundary density compared to samples grown by MBE. We show that the grain boundaries of CVD MoSe2 on graphite are predominantly mirror twin boundaries (MTBs) and distinguish two classes of such MTBs based on their orientation relative to the zigzag directions of the MoSe2 lattice. By combining atomic resolution scanning tunneling microscopy (STM) and spectroscopy measurements with DFT calculations, we demonstrate that the predominantly present MTBs running along zigzag directions only slightly perturb the electronic structure of the MoSe2 sheet. This enables the CVD growth of large-area MoSe2 layers with high structural and electronic quality. Atomic resolution STM investigations also revealed a high density (1012 cm-2) of native point defects identified as Mo vacancies. Our DFT calculations predict that Mo vacancies in MoSe2 are magnetic, and their magnetic moment can be efficiently controlled electrically by tuning the Fermi level position.
AB - Despite their application potential, the structure of CVD grown MoSe2 single layers remained relatively unexplored. Here we report the rotationally aligned CVD growth of MoSe2 single layers on graphite. Such MoSe2 layers are characterized by grain boundary structures with significantly reduced disorder and display a much lower grain boundary density compared to samples grown by MBE. We show that the grain boundaries of CVD MoSe2 on graphite are predominantly mirror twin boundaries (MTBs) and distinguish two classes of such MTBs based on their orientation relative to the zigzag directions of the MoSe2 lattice. By combining atomic resolution scanning tunneling microscopy (STM) and spectroscopy measurements with DFT calculations, we demonstrate that the predominantly present MTBs running along zigzag directions only slightly perturb the electronic structure of the MoSe2 sheet. This enables the CVD growth of large-area MoSe2 layers with high structural and electronic quality. Atomic resolution STM investigations also revealed a high density (1012 cm-2) of native point defects identified as Mo vacancies. Our DFT calculations predict that Mo vacancies in MoSe2 are magnetic, and their magnetic moment can be efficiently controlled electrically by tuning the Fermi level position.
UR - http://www.scopus.com/inward/record.url?scp=85072972764&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.9b05921
DO - 10.1021/acs.jpcc.9b05921
M3 - Article
AN - SCOPUS:85072972764
VL - 123
SP - 24855
EP - 24864
JO - Journal of physical chemistry. C
JF - Journal of physical chemistry. C
SN - 1932-7447
IS - 40
ER -