Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers

Antal A. Koós, Péter Vancsó, Márton Szendrö, Gergely Dobrik, David Antognini Silva, Zakhar I. Popov, Pavel B. Sorokin, Luc Henrard, Chanyong Hwang, László P. Biró, Levente Tapasztó

Research output: Contribution to journalArticle

Abstract

Despite their application potential, the structure of CVD grown MoSe2 single layers remained relatively unexplored. Here we report the rotationally aligned CVD growth of MoSe2 single layers on graphite. Such MoSe2 layers are characterized by grain boundary structures with significantly reduced disorder and display a much lower grain boundary density compared to samples grown by MBE. We show that the grain boundaries of CVD MoSe2 on graphite are predominantly mirror twin boundaries (MTBs) and distinguish two classes of such MTBs based on their orientation relative to the zigzag directions of the MoSe2 lattice. By combining atomic resolution scanning tunneling microscopy (STM) and spectroscopy measurements with DFT calculations, we demonstrate that the predominantly present MTBs running along zigzag directions only slightly perturb the electronic structure of the MoSe2 sheet. This enables the CVD growth of large-area MoSe2 layers with high structural and electronic quality. Atomic resolution STM investigations also revealed a high density (1012 cm-2) of native point defects identified as Mo vacancies. Our DFT calculations predict that Mo vacancies in MoSe2 are magnetic, and their magnetic moment can be efficiently controlled electrically by tuning the Fermi level position.

Original languageEnglish
Pages (from-to)24855-24864
Number of pages10
JournalJournal of Physical Chemistry C
Volume123
Issue number40
DOIs
Publication statusPublished - 10 Oct 2019

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Electronic properties
Chemical vapor deposition
Magnetic properties
vapor deposition
magnetic properties
Defects
Grain boundaries
Mirrors
Graphite
grain boundaries
defects
Scanning tunneling microscopy
mirrors
electronics
Discrete Fourier transforms
Vacancies
scanning tunneling microscopy
graphite
Point defects
Magnetic moments

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Koós, A. A., Vancsó, P., Szendrö, M., Dobrik, G., Antognini Silva, D., Popov, Z. I., ... Tapasztó, L. (2019). Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers. Journal of Physical Chemistry C, 123(40), 24855-24864. https://doi.org/10.1021/acs.jpcc.9b05921
Koós, Antal A. ; Vancsó, Péter ; Szendrö, Márton ; Dobrik, Gergely ; Antognini Silva, David ; Popov, Zakhar I. ; Sorokin, Pavel B. ; Henrard, Luc ; Hwang, Chanyong ; Biró, László P. ; Tapasztó, Levente. / Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers. In: Journal of Physical Chemistry C. 2019 ; Vol. 123, No. 40. pp. 24855-24864.
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Koós, AA, Vancsó, P, Szendrö, M, Dobrik, G, Antognini Silva, D, Popov, ZI, Sorokin, PB, Henrard, L, Hwang, C, Biró, LP & Tapasztó, L 2019, 'Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers', Journal of Physical Chemistry C, vol. 123, no. 40, pp. 24855-24864. https://doi.org/10.1021/acs.jpcc.9b05921

Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers. / Koós, Antal A.; Vancsó, Péter; Szendrö, Márton; Dobrik, Gergely; Antognini Silva, David; Popov, Zakhar I.; Sorokin, Pavel B.; Henrard, Luc; Hwang, Chanyong; Biró, László P.; Tapasztó, Levente.

In: Journal of Physical Chemistry C, Vol. 123, No. 40, 10.10.2019, p. 24855-24864.

Research output: Contribution to journalArticle

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T1 - Influence of Native Defects on the Electronic and Magnetic Properties of CVD Grown MoSe2 Single Layers

AU - Koós, Antal A.

AU - Vancsó, Péter

AU - Szendrö, Márton

AU - Dobrik, Gergely

AU - Antognini Silva, David

AU - Popov, Zakhar I.

AU - Sorokin, Pavel B.

AU - Henrard, Luc

AU - Hwang, Chanyong

AU - Biró, László P.

AU - Tapasztó, Levente

PY - 2019/10/10

Y1 - 2019/10/10

N2 - Despite their application potential, the structure of CVD grown MoSe2 single layers remained relatively unexplored. Here we report the rotationally aligned CVD growth of MoSe2 single layers on graphite. Such MoSe2 layers are characterized by grain boundary structures with significantly reduced disorder and display a much lower grain boundary density compared to samples grown by MBE. We show that the grain boundaries of CVD MoSe2 on graphite are predominantly mirror twin boundaries (MTBs) and distinguish two classes of such MTBs based on their orientation relative to the zigzag directions of the MoSe2 lattice. By combining atomic resolution scanning tunneling microscopy (STM) and spectroscopy measurements with DFT calculations, we demonstrate that the predominantly present MTBs running along zigzag directions only slightly perturb the electronic structure of the MoSe2 sheet. This enables the CVD growth of large-area MoSe2 layers with high structural and electronic quality. Atomic resolution STM investigations also revealed a high density (1012 cm-2) of native point defects identified as Mo vacancies. Our DFT calculations predict that Mo vacancies in MoSe2 are magnetic, and their magnetic moment can be efficiently controlled electrically by tuning the Fermi level position.

AB - Despite their application potential, the structure of CVD grown MoSe2 single layers remained relatively unexplored. Here we report the rotationally aligned CVD growth of MoSe2 single layers on graphite. Such MoSe2 layers are characterized by grain boundary structures with significantly reduced disorder and display a much lower grain boundary density compared to samples grown by MBE. We show that the grain boundaries of CVD MoSe2 on graphite are predominantly mirror twin boundaries (MTBs) and distinguish two classes of such MTBs based on their orientation relative to the zigzag directions of the MoSe2 lattice. By combining atomic resolution scanning tunneling microscopy (STM) and spectroscopy measurements with DFT calculations, we demonstrate that the predominantly present MTBs running along zigzag directions only slightly perturb the electronic structure of the MoSe2 sheet. This enables the CVD growth of large-area MoSe2 layers with high structural and electronic quality. Atomic resolution STM investigations also revealed a high density (1012 cm-2) of native point defects identified as Mo vacancies. Our DFT calculations predict that Mo vacancies in MoSe2 are magnetic, and their magnetic moment can be efficiently controlled electrically by tuning the Fermi level position.

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DO - 10.1021/acs.jpcc.9b05921

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JF - Journal of physical chemistry. C

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