Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

Alex Polizzotti; Alireza Faghaninia; Jeremy R. Poindexter; Lea Nienhaus; Vera Steinmann; Robert L.Z. Hoye; Alexandre Felten; Amjad Deyine; Niall M. Mangan; Juan Pablo Correa-Baena; Seong Sik Shin; Shaffiq Jaffer; Moungi G. Bawendi; Cynthia Lo; Tonio Buonassisi

doi:10.1021/acs.jpclett.7b01406

Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

Alex Polizzotti, Alireza Faghaninia, Jeremy R. Poindexter, Lea Nienhaus, Vera Steinmann, Robert L.Z. Hoye, Alexandre Felten, Amjad Deyine, Niall M. Mangan, Juan Pablo Correa-Baena, Seong Sik Shin, Shaffiq Jaffer, Moungi G. Bawendi, Cynthia Lo, Tonio Buonassisi

Namur Institute of Structured Matter

Research output: Contribution to journal › Article › peer-review

Abstract

Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.

Original language	English
Pages (from-to)	3661-3667
Number of pages	7
Journal	Journal of Physical Chemistry Letters
Volume	8
Issue number	15
DOIs	https://doi.org/10.1021/acs.jpclett.7b01406
Publication status	Published - 3 Aug 2017

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Polizzotti, A., Faghaninia, A., Poindexter, J. R., Nienhaus, L., Steinmann, V., Hoye, R. L. Z., Felten, A., Deyine, A., Mangan, N. M., Correa-Baena, J. P., Shin, S. S., Jaffer, S., Bawendi, M. G., Lo, C., & Buonassisi, T. (2017). Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects. Journal of Physical Chemistry Letters, 8(15), 3661-3667. https://doi.org/10.1021/acs.jpclett.7b01406

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title = "Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects",

abstract = "Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.",

author = "Alex Polizzotti and Alireza Faghaninia and Poindexter, {Jeremy R.} and Lea Nienhaus and Vera Steinmann and Hoye, {Robert L.Z.} and Alexandre Felten and Amjad Deyine and Mangan, {Niall M.} and Correa-Baena, {Juan Pablo} and Shin, {Seong Sik} and Shaffiq Jaffer and Bawendi, {Moungi G.} and Cynthia Lo and Tonio Buonassisi",

note = "Funding Information: L.N. was supported as part of the Center for Excitonics, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001088 (MIT). This work used the Center for Materials Science and Engineering at MIT, which is supported by NSF Award DMR-08-19762, and the Center for Nanoscale Systems at Harvard University under NSF Award ECS-0335765. Publisher Copyright: {\textcopyright} 2017 American Chemical Society. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2017",

month = aug,

day = "3",

doi = "10.1021/acs.jpclett.7b01406",

language = "English",

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journal = "Journal of Physical Chemistry Letters",

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Polizzotti, A, Faghaninia, A, Poindexter, JR, Nienhaus, L, Steinmann, V, Hoye, RLZ, Felten, A, Deyine, A, Mangan, NM, Correa-Baena, JP, Shin, SS, Jaffer, S, Bawendi, MG, Lo, C & Buonassisi, T 2017, 'Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects', Journal of Physical Chemistry Letters, vol. 8, no. 15, pp. 3661-3667. https://doi.org/10.1021/acs.jpclett.7b01406

TY - JOUR

T1 - Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

AU - Polizzotti, Alex

AU - Faghaninia, Alireza

AU - Poindexter, Jeremy R.

AU - Nienhaus, Lea

AU - Steinmann, Vera

AU - Hoye, Robert L.Z.

AU - Felten, Alexandre

AU - Deyine, Amjad

AU - Mangan, Niall M.

AU - Correa-Baena, Juan Pablo

AU - Shin, Seong Sik

AU - Jaffer, Shaffiq

AU - Bawendi, Moungi G.

AU - Lo, Cynthia

AU - Buonassisi, Tonio

N1 - Funding Information: L.N. was supported as part of the Center for Excitonics, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001088 (MIT). This work used the Center for Materials Science and Engineering at MIT, which is supported by NSF Award DMR-08-19762, and the Center for Nanoscale Systems at Harvard University under NSF Award ECS-0335765. Publisher Copyright: © 2017 American Chemical Society. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/8/3

Y1 - 2017/8/3

N2 - Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.

AB - Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.

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DO - 10.1021/acs.jpclett.7b01406

M3 - Article

AN - SCOPUS:85026804425

SN - 0366-7022

VL - 8

SP - 3661

EP - 3667

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

IS - 15

ER -

Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

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Synthesis, Irradiation and Analysis of Materials (SIAM)

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Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

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