Improved electrical mobility in highly epitaxial La: BaSnO3 films on SmScO3(110) substrates

P. V. Wadekar; J. Alaria; M. O'Sullivan; N. L O Flack; T. D. Manning; L. J. Phillips; K. Durose; Omar Lozano Garcia; S. Lucas; J. B. Claridge; M. J. Rosseinsky

doi:10.1063/1.4891816

Improved electrical mobility in highly epitaxial La: BaSnO3 films on SmScO3(110) substrates

P. V. Wadekar, J. Alaria, M. O'Sullivan, N. L O Flack, T. D. Manning, L. J. Phillips, K. Durose, Omar Lozano Garcia, S. Lucas, J. B. Claridge, M. J. Rosseinsky

Research output: Contribution to journal › Article › peer-review

Abstract

Heteroepitaxial growth of BaSnO₃ and Ba_1-xLa _xSnO₃ (x = 7%) lanthanum doped barium stannate thin films on different perovskite single crystal (SrTiO₃ (001) and SmScO ₃ (110)) substrates has been achieved by pulsed laser deposition under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced X-ray emission confirms the stoichiometric La transfer from a polyphasic target, producing films with measured La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities, and carrier concentrations of 4.4 mΩ cm, 10.11 cm² V^-1 s ^-1, and 1.38 × 10²⁰ cm^-3 on SmScO ₃ and 7.8 mΩ cm, 5.8 cm² V^-1 s ^-1, and 1.36 × 10²⁰ cm^-3 on SrTiO ₃ ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO₃ substrate are attributed to reduction in dislocation density from the lower lattice mismatch.

Original language	English
Article number	052104
Journal	Applied Physics Letters
Volume	105
Issue number	5
DOIs	https://doi.org/10.1063/1.4891816
Publication status	Published - 4 Aug 2014

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@article{a4983ed6a61e4224b79bf36de9de3334,

title = "Improved electrical mobility in highly epitaxial La: BaSnO3 films on SmScO3(110) substrates",

abstract = "Heteroepitaxial growth of BaSnO3 and Ba1-xLa xSnO3 (x = 7%) lanthanum doped barium stannate thin films on different perovskite single crystal (SrTiO3 (001) and SmScO 3 (110)) substrates has been achieved by pulsed laser deposition under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced X-ray emission confirms the stoichiometric La transfer from a polyphasic target, producing films with measured La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities, and carrier concentrations of 4.4 mΩ cm, 10.11 cm2 V-1 s -1, and 1.38 × 1020 cm-3 on SmScO 3 and 7.8 mΩ cm, 5.8 cm2 V-1 s -1, and 1.36 × 1020 cm-3 on SrTiO 3 ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO3 substrate are attributed to reduction in dislocation density from the lower lattice mismatch.",

author = "Wadekar, {P. V.} and J. Alaria and M. O'Sullivan and Flack, {N. L O} and Manning, {T. D.} and Phillips, {L. J.} and K. Durose and {Lozano Garcia}, Omar and S. Lucas and Claridge, {J. B.} and Rosseinsky, {M. J.}",

year = "2014",

month = aug,

day = "4",

doi = "10.1063/1.4891816",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

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T1 - Improved electrical mobility in highly epitaxial La: BaSnO3 films on SmScO3(110) substrates

AU - Wadekar, P. V.

AU - Alaria, J.

AU - O'Sullivan, M.

AU - Flack, N. L O

AU - Manning, T. D.

AU - Phillips, L. J.

AU - Durose, K.

AU - Lozano Garcia, Omar

AU - Lucas, S.

AU - Claridge, J. B.

AU - Rosseinsky, M. J.

PY - 2014/8/4

Y1 - 2014/8/4

N2 - Heteroepitaxial growth of BaSnO3 and Ba1-xLa xSnO3 (x = 7%) lanthanum doped barium stannate thin films on different perovskite single crystal (SrTiO3 (001) and SmScO 3 (110)) substrates has been achieved by pulsed laser deposition under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced X-ray emission confirms the stoichiometric La transfer from a polyphasic target, producing films with measured La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities, and carrier concentrations of 4.4 mΩ cm, 10.11 cm2 V-1 s -1, and 1.38 × 1020 cm-3 on SmScO 3 and 7.8 mΩ cm, 5.8 cm2 V-1 s -1, and 1.36 × 1020 cm-3 on SrTiO 3 ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO3 substrate are attributed to reduction in dislocation density from the lower lattice mismatch.

AB - Heteroepitaxial growth of BaSnO3 and Ba1-xLa xSnO3 (x = 7%) lanthanum doped barium stannate thin films on different perovskite single crystal (SrTiO3 (001) and SmScO 3 (110)) substrates has been achieved by pulsed laser deposition under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced X-ray emission confirms the stoichiometric La transfer from a polyphasic target, producing films with measured La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities, and carrier concentrations of 4.4 mΩ cm, 10.11 cm2 V-1 s -1, and 1.38 × 1020 cm-3 on SmScO 3 and 7.8 mΩ cm, 5.8 cm2 V-1 s -1, and 1.36 × 1020 cm-3 on SrTiO 3 ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO3 substrate are attributed to reduction in dislocation density from the lower lattice mismatch.

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Improved electrical mobility in highly epitaxial La: BaSnO3 films on SmScO3(110) substrates

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Improved electrical mobility in highly epitaxial La: BaSnO3 films on SmScO3(110) substrates

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