TY - GEN
T1 - Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance
AU - Larrieu, G.
AU - Dubois, E.
AU - Yarekha, D.
AU - Breil, N.
AU - Reckinger, N.
AU - Tang, X.
AU - Ratajczak, J.
AU - Laszcz, A.
PY - 2008/12/5
Y1 - 2008/12/5
N2 - This paper proposes to study the impact of a moderate variation of the channel doping level on the electrical performance of p-type Schottky-barrier (SB) MOSFETs. First, it has been found that a moderate increase of the acceptors doping level leads to a reduction of the Schottky-barrier height (SBH) but does not affect the silicide reaction. In the case of PtSi, the SBH on p-type silicon at 5 × 10 cm is 0.15 eV whereas an increase of the doping level by two decades decreases the barrier by 60 meV. The integration of PtSi MOSFETs on moderately doped channel (5 × 10 cm) was successfully achieved, demonstrating an overall 60% improvement in current drive at L = 100 nm. This enhanced performance is attributed to the barrier height reduction related to the beneficial band bending induced by p-type dopants. The considered doping levels are still in a sufficiently low range not to affect the carrier mobility in the channel. A complete study, including comparison of I, I, immunity against short channel effects (Swing and DIBL), is presented. © 2008 Elsevier B.V. All rights reserved.
AB - This paper proposes to study the impact of a moderate variation of the channel doping level on the electrical performance of p-type Schottky-barrier (SB) MOSFETs. First, it has been found that a moderate increase of the acceptors doping level leads to a reduction of the Schottky-barrier height (SBH) but does not affect the silicide reaction. In the case of PtSi, the SBH on p-type silicon at 5 × 10 cm is 0.15 eV whereas an increase of the doping level by two decades decreases the barrier by 60 meV. The integration of PtSi MOSFETs on moderately doped channel (5 × 10 cm) was successfully achieved, demonstrating an overall 60% improvement in current drive at L = 100 nm. This enhanced performance is attributed to the barrier height reduction related to the beneficial band bending induced by p-type dopants. The considered doping levels are still in a sufficiently low range not to affect the carrier mobility in the channel. A complete study, including comparison of I, I, immunity against short channel effects (Swing and DIBL), is presented. © 2008 Elsevier B.V. All rights reserved.
UR - http://www.scopus.com/inward/record.url?scp=57049086917&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2008.10.014
DO - 10.1016/j.mseb.2008.10.014
M3 - Conference contribution
VL - 154-155
SP - 159
EP - 162
BT - Materials science and engineering B
ER -