Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance

G. Larrieu, Emmanuel Dubois, D.A. Yarekha, N. Breil, Nicolas Reckinger, Xiaohui Tang, J. Ratajczak, A. Laszcz

Research output: Contribution to conferenceAbstract

Scientific committee

Scientific committeeEuropean Materials Research Society - Spring Meeting
CountryFrance
CityStrasbourg
Period26/05/0830/05/08

Cite this

Larrieu, G., Dubois, E., Yarekha, D. A., Breil, N., Reckinger, N., Tang, X., ... Laszcz, A. (2008). Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance. Abstract from European Materials Research Society - Spring Meeting, Strasbourg, France.
Larrieu, G. ; Dubois, Emmanuel ; Yarekha, D.A. ; Breil, N. ; Reckinger, Nicolas ; Tang, Xiaohui ; Ratajczak, J. ; Laszcz, A. / Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance. Abstract from European Materials Research Society - Spring Meeting, Strasbourg, France.
@conference{875e5107562943c0962c6827c6ba5882,
title = "Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance",
author = "G. Larrieu and Emmanuel Dubois and D.A. Yarekha and N. Breil and Nicolas Reckinger and Xiaohui Tang and J. Ratajczak and A. Laszcz",
year = "2008",
language = "English",
note = "European Materials Research Society - Spring Meeting ; Conference date: 26-05-2008 Through 30-05-2008",

}

Larrieu, G, Dubois, E, Yarekha, DA, Breil, N, Reckinger, N, Tang, X, Ratajczak, J & Laszcz, A 2008, 'Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance' European Materials Research Society - Spring Meeting, Strasbourg, France, 26/05/08 - 30/05/08, .

Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance. / Larrieu, G.; Dubois, Emmanuel; Yarekha, D.A.; Breil, N.; Reckinger, Nicolas; Tang, Xiaohui; Ratajczak, J.; Laszcz, A.

2008. Abstract from European Materials Research Society - Spring Meeting, Strasbourg, France.

Research output: Contribution to conferenceAbstract

TY - CONF

T1 - Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance

AU - Larrieu, G.

AU - Dubois, Emmanuel

AU - Yarekha, D.A.

AU - Breil, N.

AU - Reckinger, Nicolas

AU - Tang, Xiaohui

AU - Ratajczak, J.

AU - Laszcz, A.

PY - 2008

Y1 - 2008

M3 - Abstract

ER -

Larrieu G, Dubois E, Yarekha DA, Breil N, Reckinger N, Tang X et al. Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance. 2008. Abstract from European Materials Research Society - Spring Meeting, Strasbourg, France.