Abstract
Heteroepitaxy of single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B has been achieved using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology are indicated by reflection high-energy electron diffraction (RHEED) patterns. X-ray diffraction spectra of the resulting single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B demonstrated that the orientation of PbSe is (1 0 0) on GaAs(1 0 0), while on GaAs(2 1 1)B it is close to (5 1 1). Cross-sectional transmission electron microscopy revealed the presence of an abrupt interface between PbSe and GaAs and good crystallinity of the PbSe film for both orientations. Selective-area diffraction pattern confirmed the epitaxial relationship between PbSe and GaAs.
Original language | English |
---|---|
Pages (from-to) | 2359-2362 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 311 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Apr 2009 |
Keywords
- A1. Dislocations
- A2. Molecular beam epitaxy
- B2. GaAs
- B2. PbSe
Fingerprint
Dive into the research topics of 'Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy'. Together they form a unique fingerprint.Equipment
-
Synthesis, Irradiation and Analysis of Materials (SIAM)
Louette, P. (Manager), Colaux, J. (Manager), Felten, A. (Manager), Tabarrant, T. (Operator), COME, F. (Operator) & Debarsy, P.-L. (Manager)
Technological Platform Synthesis, Irradiation and Analysis of MaterialsFacility/equipment: Technological Platform