Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy

X. J. Wang, Y. B. Hou, Y. Chang, C. R. Becker, R. F. Klie, T. W. Kang, R. Sporken, S. Sivananthan

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Heteroepitaxy of single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B has been achieved using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology are indicated by reflection high-energy electron diffraction (RHEED) patterns. X-ray diffraction spectra of the resulting single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B demonstrated that the orientation of PbSe is (1 0 0) on GaAs(1 0 0), while on GaAs(2 1 1)B it is close to (5 1 1). Cross-sectional transmission electron microscopy revealed the presence of an abrupt interface between PbSe and GaAs and good crystallinity of the PbSe film for both orientations. Selective-area diffraction pattern confirmed the epitaxial relationship between PbSe and GaAs.

    Original languageEnglish
    Pages (from-to)2359-2362
    Number of pages4
    JournalJournal of Crystal Growth
    Volume311
    Issue number8
    DOIs
    Publication statusPublished - 1 Apr 2009

    Keywords

    • A1. Dislocations
    • A2. Molecular beam epitaxy
    • B2. GaAs
    • B2. PbSe

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