Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors

Jui Fen Chang, Tomo Sakanoue, Yoann Olivier, Takafumi Uemura, Marie Beatrice Dufourg-Madec, Stephen G. Yeates, Jérôme Cornil, Jun Takeya, Alessandro Troisi, Henning Sirringhaus

Research output: Contribution to journalArticle

Abstract

Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.

Original languageEnglish
Article number066601
JournalPhysical review letters
Volume107
Issue number6
DOIs
Publication statusPublished - 2 Aug 2011
Externally publishedYes

Fingerprint Dive into the research topics of 'Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors'. Together they form a unique fingerprint.

  • Cite this

    Chang, J. F., Sakanoue, T., Olivier, Y., Uemura, T., Dufourg-Madec, M. B., Yeates, S. G., Cornil, J., Takeya, J., Troisi, A., & Sirringhaus, H. (2011). Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors. Physical review letters, 107(6), [066601]. https://doi.org/10.1103/PhysRevLett.107.066601