Growth of HgCdTe/CdTe/Si by Molecular Beam Epitaxy

Badano Giacomo; Abad Hisham; Sivalingam Sivananthan; David Smith; Robert Sporken; N. Dhar; Greg Brill; Yuanping Chen

Growth of HgCdTe/CdTe/Si by Molecular Beam Epitaxy

Badano Giacomo, Abad Hisham, Sivalingam Sivananthan, David Smith, Robert Sporken, N. Dhar, Greg Brill, Yuanping Chen

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Proceedings of the International Workshop on Crystal Growth and Characterization of Technologically Important Materials
Place of Publication	Chennai (India)
Pages	181-190
Publication status	Published - 2004

Cite this

@inproceedings{847fe36265a4406e9b5a79ef8b223266,

title = "Growth of HgCdTe/CdTe/Si by Molecular Beam Epitaxy",

author = "Badano Giacomo and Abad Hisham and Sivalingam Sivananthan and David Smith and Robert Sporken and N. Dhar and Greg Brill and Yuanping Chen",

year = "2004",

language = "English",

pages = "181--190",

booktitle = "Proceedings of the International Workshop on Crystal Growth and Characterization of Technologically Important Materials",

}

Growth of HgCdTe/CdTe/Si by Molecular Beam Epitaxy. / Giacomo, Badano; Hisham, Abad; Sivananthan, Sivalingam et al.
Proceedings of the International Workshop on Crystal Growth and Characterization of Technologically Important Materials . Chennai (India), 2004. p. 181-190.

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Growth of HgCdTe/CdTe/Si by Molecular Beam Epitaxy

AU - Giacomo, Badano

AU - Hisham, Abad

AU - Sivananthan, Sivalingam

AU - Smith, David

AU - Sporken, Robert

AU - Dhar, N.

AU - Brill, Greg

AU - Chen, Yuanping

PY - 2004

Y1 - 2004

M3 - Conference contribution

SP - 181

EP - 190

BT - Proceedings of the International Workshop on Crystal Growth and Characterization of Technologically Important Materials

CY - Chennai (India)

ER -