Abstract
Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(0001¯) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.
Original language | English |
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Article number | 125442 |
Journal | Physical Review. B, Condensed Matter and Materials Physics |
Volume | 91 |
Issue number | 12 |
DOIs | |
Publication status | Published - 31 Mar 2015 |
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Morphology - Imaging
Francesca Cecchet (Manager) & Henri-Francois Renard (Manager)
Technological Platform Morphology - ImagingFacility/equipment: Technological Platform
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Scanning Tunneling Microscopy
Robert Sporken (Manager)
Technological Platform Morphology - ImagingFacility/equipment: Equipment
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Synthesis, Irradiation and Analysis of Materials (SIAM)
Pierre Louette (Manager), Julien Colaux (Manager), Alexandre Felten (Manager), Tijani Tabarrant (Operator), Frederic COME (Operator) & Paul-Louis Debarsy (Manager)
Technological Platform Synthesis, Irradiation and Analysis of MaterialsFacility/equipment: Technological Platform