Abstract
Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(0001¯) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.
Original language | English |
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Article number | 125442 |
Journal | Physical Review. B, Condensed Matter and Materials Physics |
Volume | 91 |
Issue number | 12 |
DOIs | |
Publication status | Published - 31 Mar 2015 |
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Morphology - Imaging
Cecchet, F. (Manager) & Renard, H.-F. (Manager)
Technological Platform Morphology - ImagingFacility/equipment: Technological Platform
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Scanning Tunneling Microscopy
Sporken, R. (Manager)
Technological Platform Morphology - ImagingFacility/equipment: Equipment
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Synthesis, Irradiation and Analysis of Materials (SIAM)
Louette, P. (Manager), Colaux, J. (Manager), Felten, A. (Manager), Tabarrant, T. (Operator), COME, F. (Operator) & Debarsy, P.-L. (Manager)
Technological Platform Synthesis, Irradiation and Analysis of MaterialsFacility/equipment: Technological Platform