Giant tunnel-electron injection in nitrogen-doped graphene

Jérôme Lagoute, Frédéric Joucken, Vincent Repain, Yann Tison, Cyril Chacon, Amandine Bellec, Yann Girard, Robert Sporken, Edward H. Conrad, François Ducastelle, Mattias Palsgaard, Nick Papior Andersen, Mads Brandbyge, Sylvie Rousset

Research output: Contribution to journalArticle

Abstract

Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(0001¯) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

Original languageEnglish
Article number125442
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number12
DOIs
Publication statusPublished - 31 Mar 2015

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Electron injection
Graphite
Graphene
tunnels
Tunnels
graphene
Nitrogen
injection
nitrogen
Fermi level
electrons
nitrogen atoms
scanning tunneling microscopy
Scanning tunneling microscopy
broken symmetry
Carbon
Doping (additives)
augmentation
Spectroscopy
carbon

Cite this

Lagoute, Jérôme ; Joucken, Frédéric ; Repain, Vincent ; Tison, Yann ; Chacon, Cyril ; Bellec, Amandine ; Girard, Yann ; Sporken, Robert ; Conrad, Edward H. ; Ducastelle, François ; Palsgaard, Mattias ; Andersen, Nick Papior ; Brandbyge, Mads ; Rousset, Sylvie. / Giant tunnel-electron injection in nitrogen-doped graphene. In: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Vol. 91, No. 12.
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Lagoute, J, Joucken, F, Repain, V, Tison, Y, Chacon, C, Bellec, A, Girard, Y, Sporken, R, Conrad, EH, Ducastelle, F, Palsgaard, M, Andersen, NP, Brandbyge, M & Rousset, S 2015, 'Giant tunnel-electron injection in nitrogen-doped graphene', Physical Review B - Condensed Matter and Materials Physics, vol. 91, no. 12, 125442. https://doi.org/10.1103/PhysRevB.91.125442

Giant tunnel-electron injection in nitrogen-doped graphene. / Lagoute, Jérôme; Joucken, Frédéric; Repain, Vincent; Tison, Yann; Chacon, Cyril; Bellec, Amandine; Girard, Yann; Sporken, Robert; Conrad, Edward H.; Ducastelle, François; Palsgaard, Mattias; Andersen, Nick Papior; Brandbyge, Mads; Rousset, Sylvie.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 12, 125442, 31.03.2015.

Research output: Contribution to journalArticle

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AU - Lagoute, Jérôme

AU - Joucken, Frédéric

AU - Repain, Vincent

AU - Tison, Yann

AU - Chacon, Cyril

AU - Bellec, Amandine

AU - Girard, Yann

AU - Sporken, Robert

AU - Conrad, Edward H.

AU - Ducastelle, François

AU - Palsgaard, Mattias

AU - Andersen, Nick Papior

AU - Brandbyge, Mads

AU - Rousset, Sylvie

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AB - Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(0001¯) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

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