Giant tunnel-electron injection in nitrogen-doped graphene

Jérôme Lagoute, Frédéric Joucken, Vincent Repain, Yann Tison, Cyril Chacon, Amandine Bellec, Yann Girard, Robert Sporken, Edward H. Conrad, François Ducastelle, Mattias Palsgaard, Nick Papior Andersen, Mads Brandbyge, Sylvie Rousset

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Abstract

Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(0001¯) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

Original languageEnglish
Article number125442
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number12
DOIs
Publication statusPublished - 31 Mar 2015

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Lagoute, J., Joucken, F., Repain, V., Tison, Y., Chacon, C., Bellec, A., Girard, Y., Sporken, R., Conrad, E. H., Ducastelle, F., Palsgaard, M., Andersen, N. P., Brandbyge, M., & Rousset, S. (2015). Giant tunnel-electron injection in nitrogen-doped graphene. Physical Review B - Condensed Matter and Materials Physics, 91(12), [125442]. https://doi.org/10.1103/PhysRevB.91.125442