Formation of carbon nitride compounds during successive implantations in copper

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    Abstract

    Copper substrates are successively implanted with carbon and nitrogen (13C+ and 14N+) at high fluences (5×1017 and 1×1017 at.cm-2, respectively) in order to synthesize specific carbon nitride compounds. The concentration as well as the depth distribution of carbon 13C+ and nitrogen 14N+ are determined using non resonant nuclear reactions induced by a 1.05MeV deuteron beam. The use of (d,p) and (d,α) reactions allows us to profile both 13C+ and 14N+ elements with a single and relatively rapid measurement and a quite good resolution. The bonded states of carbon and nitrogen are studied as a function of depth by X-ray photoelectron spectroscopy (XPS). The curve fitting of the C 1s and N 1s photopeaks shows that carbon and nitrogen atoms exist in different chemical states depending on the analysis depth, which correspond to specific kinds of chemical bonds. At least two characteristic C'N bonds are detected indicating that different carbon nitride compounds have been formed during the implantations.
    Original languageEnglish
    Pages (from-to)19-23
    Number of pages5
    JournalJournal of Electron Spectroscopy and Related Phenomena
    Volume151
    Issue number1
    Publication statusPublished - 2006

    Keywords

    • Carbon; Nitrogen; XPS; NRA; Implantation

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