Fabrication of SOI nano devices

X. Tang, Nicolas Reckinger, V. Bayot

    Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

    Abstract

    Some current fabrication technologies of SOI nano devices are reviewed in
    this paper. By means of arsenic-assisted etching and oxidation effects, we have
    fabricated several SOI nano devices: single-electron transistor, nano floating
    gate memory device and cell, Ω-gate elevated source/drain MOSFET. The
    application of this technique for fabricating a Schottky barrier MOSFET is
    also presented.
    Original languageEnglish
    Title of host publicationScience and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment
    Publication statusPublished - 2005

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