Evolution of nanoripples on silicon by gas cluster-ion irradiation

Omar Lozano Garcia; Q. Y. Chen; B. P. Tilakaratne; H. W. Seo; X. M. Wang; P. V. Wadekar; P. V. Chinta; L. W. Tu; N. J. Ho; D. Wijesundera; W. K. Chu

doi:10.1063/1.4811171

Evolution of nanoripples on silicon by gas cluster-ion irradiation

Omar Lozano Garcia, Q. Y. Chen, B. P. Tilakaratne, H. W. Seo, X. M. Wang, P. V. Wadekar, P. V. Chinta, L. W. Tu, N. J. Ho, D. Wijesundera, W. K. Chu

Research output: Contribution to journal › Article › peer-review

Abstract

Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles. Similar surface morphology ripples developed in different nanoscales. A simple scaling functional satisfactorily describe the roughness and wavelength of the ripple patterns as a function of dosage and angle of incidence. The ripples are formed orthogonal to the incident cluster-ions at large off-normal angles. An ellipsoidal pattern was created by two consecutive irradiations incident in mutually orthogonal directions with unequal exposure times between each irradiation, from 7:1 to 10:1, beyond which the original ripple imprints would be over-written. This work was inspired by use of the ripples to seed growth of controlled nanostructures without patterning by lithography or predeposition of catalysts.

Original language	English
Article number	062107
Journal	RSC Advances
Volume	3
Issue number	6
DOIs	https://doi.org/10.1063/1.4811171
Publication status	Published - 28 Aug 2013

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title = "Evolution of nanoripples on silicon by gas cluster-ion irradiation",

abstract = "Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles. Similar surface morphology ripples developed in different nanoscales. A simple scaling functional satisfactorily describe the roughness and wavelength of the ripple patterns as a function of dosage and angle of incidence. The ripples are formed orthogonal to the incident cluster-ions at large off-normal angles. An ellipsoidal pattern was created by two consecutive irradiations incident in mutually orthogonal directions with unequal exposure times between each irradiation, from 7:1 to 10:1, beyond which the original ripple imprints would be over-written. This work was inspired by use of the ripples to seed growth of controlled nanostructures without patterning by lithography or predeposition of catalysts.",

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doi = "10.1063/1.4811171",

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T1 - Evolution of nanoripples on silicon by gas cluster-ion irradiation

AU - Lozano Garcia, Omar

AU - Chen, Q. Y.

AU - Tilakaratne, B. P.

AU - Seo, H. W.

AU - Wang, X. M.

AU - Wadekar, P. V.

AU - Chinta, P. V.

AU - Tu, L. W.

AU - Ho, N. J.

AU - Wijesundera, D.

AU - Chu, W. K.

PY - 2013/8/28

Y1 - 2013/8/28

N2 - Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles. Similar surface morphology ripples developed in different nanoscales. A simple scaling functional satisfactorily describe the roughness and wavelength of the ripple patterns as a function of dosage and angle of incidence. The ripples are formed orthogonal to the incident cluster-ions at large off-normal angles. An ellipsoidal pattern was created by two consecutive irradiations incident in mutually orthogonal directions with unequal exposure times between each irradiation, from 7:1 to 10:1, beyond which the original ripple imprints would be over-written. This work was inspired by use of the ripples to seed growth of controlled nanostructures without patterning by lithography or predeposition of catalysts.

AB - Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles. Similar surface morphology ripples developed in different nanoscales. A simple scaling functional satisfactorily describe the roughness and wavelength of the ripple patterns as a function of dosage and angle of incidence. The ripples are formed orthogonal to the incident cluster-ions at large off-normal angles. An ellipsoidal pattern was created by two consecutive irradiations incident in mutually orthogonal directions with unequal exposure times between each irradiation, from 7:1 to 10:1, beyond which the original ripple imprints would be over-written. This work was inspired by use of the ripples to seed growth of controlled nanostructures without patterning by lithography or predeposition of catalysts.

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Evolution of nanoripples on silicon by gas cluster-ion irradiation

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