Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles. Similar surface morphology ripples developed in different nanoscales. A simple scaling functional satisfactorily describe the roughness and wavelength of the ripple patterns as a function of dosage and angle of incidence. The ripples are formed orthogonal to the incident cluster-ions at large off-normal angles. An ellipsoidal pattern was created by two consecutive irradiations incident in mutually orthogonal directions with unequal exposure times between each irradiation, from 7:1 to 10:1, beyond which the original ripple imprints would be over-written. This work was inspired by use of the ripples to seed growth of controlled nanostructures without patterning by lithography or predeposition of catalysts.