Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode

Guoli Li, Nicolas André, Benjamin Huet, Thibault Delhaye, Nicolas Reckinger, Laurent A. Francis, Lei Liao, Jean Pierre Raskin, Yun Zeng, Denis Flandre

Research output: Contribution to journalArticle

Abstract

We present an ultra-thin lateral SOI PIN photodiode with transferred monolayer graphene as the transparent gate, to provide enhanced ultraviolet (UV) performance and mechanical flexibility beyond standard Si-based devices. The device dark current shows intact characteristics after the post-CMOS thinning and graphene transfer processing steps. The device responsivity presents high potential in UV and visible wavelength detections (i.e. within the 200-900 nm range) under monochromatic light illumination. A maximum responsivity of 0.18 A W-1 has been experimentally achieved at 390 nm wavelength and validated by simulation, for a diode with intrinsic length L i of 20 μm. Additionally, the ∼5 μm-thick device chip with direct board assembly paves the way towards the development of hybrid flexible electronics.

Original languageEnglish
Article number245101
JournalJournal of Physics D: Applied Physics
Volume52
Issue number24
DOIs
Publication statusPublished - 9 Apr 2019

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Graphite
Photodiodes
Graphene
photodiodes
graphene
Flexible electronics
Wavelength
Dark currents
Monolayers
Diodes
Lighting
SOI (semiconductors)
Processing
dark current
wavelengths
CMOS
flexibility
assembly
illumination
diodes

Keywords

  • backside illumination
  • grapheme
  • PIN photodiode
  • silicon-on-insulator
  • transparent gate
  • ultra thin
  • ultraviolet detection

Cite this

Li, Guoli ; André, Nicolas ; Huet, Benjamin ; Delhaye, Thibault ; Reckinger, Nicolas ; Francis, Laurent A. ; Liao, Lei ; Raskin, Jean Pierre ; Zeng, Yun ; Flandre, Denis. / Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode. In: Journal of Physics D: Applied Physics . 2019 ; Vol. 52, No. 24.
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abstract = "We present an ultra-thin lateral SOI PIN photodiode with transferred monolayer graphene as the transparent gate, to provide enhanced ultraviolet (UV) performance and mechanical flexibility beyond standard Si-based devices. The device dark current shows intact characteristics after the post-CMOS thinning and graphene transfer processing steps. The device responsivity presents high potential in UV and visible wavelength detections (i.e. within the 200-900 nm range) under monochromatic light illumination. A maximum responsivity of 0.18 A W-1 has been experimentally achieved at 390 nm wavelength and validated by simulation, for a diode with intrinsic length L i of 20 μm. Additionally, the ∼5 μm-thick device chip with direct board assembly paves the way towards the development of hybrid flexible electronics.",
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Li, G, André, N, Huet, B, Delhaye, T, Reckinger, N, Francis, LA, Liao, L, Raskin, JP, Zeng, Y & Flandre, D 2019, 'Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode', Journal of Physics D: Applied Physics , vol. 52, no. 24, 245101. https://doi.org/10.1088/1361-6463/ab12b8

Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode. / Li, Guoli; André, Nicolas; Huet, Benjamin; Delhaye, Thibault; Reckinger, Nicolas; Francis, Laurent A.; Liao, Lei; Raskin, Jean Pierre; Zeng, Yun; Flandre, Denis.

In: Journal of Physics D: Applied Physics , Vol. 52, No. 24, 245101, 09.04.2019.

Research output: Contribution to journalArticle

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AU - Francis, Laurent A.

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