Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode

Guoli Li, Nicolas André, Benjamin Huet, Thibault Delhaye, Nicolas Reckinger, Laurent A. Francis, Lei Liao, Jean Pierre Raskin, Yun Zeng, Denis Flandre

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We present an ultra-thin lateral SOI PIN photodiode with transferred monolayer graphene as the transparent gate, to provide enhanced ultraviolet (UV) performance and mechanical flexibility beyond standard Si-based devices. The device dark current shows intact characteristics after the post-CMOS thinning and graphene transfer processing steps. The device responsivity presents high potential in UV and visible wavelength detections (i.e. within the 200-900 nm range) under monochromatic light illumination. A maximum responsivity of 0.18 A W-1 has been experimentally achieved at 390 nm wavelength and validated by simulation, for a diode with intrinsic length L i of 20 μm. Additionally, the ∼5 μm-thick device chip with direct board assembly paves the way towards the development of hybrid flexible electronics.

    Original languageEnglish
    Article number245101
    JournalJournal of Physics D: Applied Physics
    Volume52
    Issue number24
    DOIs
    Publication statusPublished - 9 Apr 2019

    Keywords

    • backside illumination
    • grapheme
    • PIN photodiode
    • silicon-on-insulator
    • transparent gate
    • ultra thin
    • ultraviolet detection

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