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Electronic properties of chemically doped graphene
Frédéric Joucken
,
Luc Henrard
, Jérôme Lagoute
Namur Institute of Structured Matter
University of Namur
Research output
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Contribution to journal
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Article
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peer-review
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Dive into the research topics of 'Electronic properties of chemically doped graphene'. Together they form a unique fingerprint.
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INIS
graphene
100%
doped materials
100%
efficiency
33%
transport
33%
photoemission spectroscopy
33%
stm
33%
reviews
16%
probes
16%
configuration
16%
electronic structure
16%
boron
16%
spectroscopy
16%
nitrogen
16%
scattering
16%
scanning tunneling microscopy
16%
images
16%
magnetoresistance
16%
electron holes
16%
Material Science
Electronic Property
100%
Graphene
100%
Doping (Additives)
33%
Angle-Resolved Photoemission Spectroscopy
33%
Electronic Structure
16%
Boron
16%
Magnetoresistance
16%
Keyphrases
Doping Efficiency
100%
Direct Visualization
50%
Boron-doped Graphene
50%
Magnetoresistance
50%
Topography Image
50%