Electronic field-assisted emission from GaN: the role of surface charges

Alexandre Mayer, NM Miskovsky, PH Cutler

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	202-208
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	20
DOIs	https://doi.org/10.1088/0268-1242/20/2/018
Publication status	Published - 2005

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@article{44a2dbdb36d443bf92af41d4e5d64ec2,

title = "Electronic field-assisted emission from GaN: the role of surface charges",

author = "Alexandre Mayer and NM Miskovsky and PH Cutler",

year = "2005",

doi = "10.1088/0268-1242/20/2/018",

language = "English",

volume = "20",

pages = "202--208",

journal = "Semiconductor Science and Technology ",

issn = "1361-6641",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Electronic field-assisted emission from GaN: the role of surface charges

AU - Mayer, Alexandre

AU - Miskovsky, NM

AU - Cutler, PH

PY - 2005

Y1 - 2005

U2 - 10.1088/0268-1242/20/2/018

DO - 10.1088/0268-1242/20/2/018

M3 - Article

SN - 1361-6641

VL - 20

SP - 202

EP - 208

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -