Abstract
The interface formation between Sb(111) single crystals and evaporated indium has been studied with various spectroscopic techniques. It is shown from an Auger intensity analysis that a layer-growth of InSb is obtained at 550 K. LEED is used to determine the overlayer atomic geometry. The InSb layer is ordered and a lattice parameter close to the value for InSb(111) is obtained. The InSb formation is confirmed by the chemical shift of the Sb 4d and In 4d core lines with XPS.
Original language | English |
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Pages (from-to) | 370-373 |
Number of pages | 4 |
Journal | Fresenius' Zeitschrift für Analytische Chemie |
Volume | 329 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - 1 Jan 1987 |
Keywords
- Indium
- Physical chemistry
- Analytical chemistry
- Inorganic chemistry
- Chemical Shift