Abstract

The interface formation between Sb(111) single crystals and evaporated indium has been studied with various spectroscopic techniques. It is shown from an Auger intensity analysis that a layer-growth of InSb is obtained at 550 K. LEED is used to determine the overlayer atomic geometry. The InSb layer is ordered and a lattice parameter close to the value for InSb(111) is obtained. The InSb formation is confirmed by the chemical shift of the Sb 4d and In 4d core lines with XPS.

Original languageEnglish
Pages (from-to)370-373
Number of pages4
JournalFresenius' Zeitschrift für Analytische Chemie
Volume329
Issue number2-3
DOIs
Publication statusPublished - 1 Jan 1987

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Indium
Chemical shift
Lattice constants
X ray photoelectron spectroscopy
Single crystals
Electrons
Geometry
Growth

Keywords

  • Indium
  • Physical chemistry
  • Analytical chemistry
  • Inorganic chemistry
  • Chemical Shift

Cite this

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title = "Electron spectroscopic techniques applied to the study of InSb formation on heated Sb(111) surfaces",
abstract = "The interface formation between Sb(111) single crystals and evaporated indium has been studied with various spectroscopic techniques. It is shown from an Auger intensity analysis that a layer-growth of InSb is obtained at 550 K. LEED is used to determine the overlayer atomic geometry. The InSb layer is ordered and a lattice parameter close to the value for InSb(111) is obtained. The InSb formation is confirmed by the chemical shift of the Sb 4d and In 4d core lines with XPS.",
keywords = "Indium, Physical chemistry, Analytical chemistry, Inorganic chemistry, Chemical Shift",
author = "R. Sporken and P. Louette and J. G{\'e}rard and R. Caudano and Delrue, {J. P.}",
year = "1987",
month = "1",
day = "1",
doi = "10.1007/BF00469174",
language = "English",
volume = "329",
pages = "370--373",
journal = "Fresenius' Zeitschrift f{\"u}r Analytische Chemie",
issn = "0016-1152",
publisher = "Springer Verlag",
number = "2-3",

}

TY - JOUR

T1 - Electron spectroscopic techniques applied to the study of InSb formation on heated Sb(111) surfaces

AU - Sporken, R.

AU - Louette, P.

AU - Gérard, J.

AU - Caudano, R.

AU - Delrue, J. P.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - The interface formation between Sb(111) single crystals and evaporated indium has been studied with various spectroscopic techniques. It is shown from an Auger intensity analysis that a layer-growth of InSb is obtained at 550 K. LEED is used to determine the overlayer atomic geometry. The InSb layer is ordered and a lattice parameter close to the value for InSb(111) is obtained. The InSb formation is confirmed by the chemical shift of the Sb 4d and In 4d core lines with XPS.

AB - The interface formation between Sb(111) single crystals and evaporated indium has been studied with various spectroscopic techniques. It is shown from an Auger intensity analysis that a layer-growth of InSb is obtained at 550 K. LEED is used to determine the overlayer atomic geometry. The InSb layer is ordered and a lattice parameter close to the value for InSb(111) is obtained. The InSb formation is confirmed by the chemical shift of the Sb 4d and In 4d core lines with XPS.

KW - Indium

KW - Physical chemistry

KW - Analytical chemistry

KW - Inorganic chemistry

KW - Chemical Shift

UR - http://www.scopus.com/inward/record.url?scp=30244553740&partnerID=8YFLogxK

U2 - 10.1007/BF00469174

DO - 10.1007/BF00469174

M3 - Article

VL - 329

SP - 370

EP - 373

JO - Fresenius' Zeitschrift für Analytische Chemie

JF - Fresenius' Zeitschrift für Analytische Chemie

SN - 0016-1152

IS - 2-3

ER -