Electron energy loss spectroscopy of surface and interface phonons of insulators, semiconductors and superlattices

This article will start with a review of the Dielectric Theory of Electron Energy Loss Spectroscopy (EELS), in the phonon energy range, at semiconductor or insulator surfaces. Theoretical models will be developed to deal with the effects on the spectrum arising from the electron image interaction, the finite electron penetration into the substrate and the anisotropy of the dielectric function of the crystalline materials. Theoretical predictions for EELS on isotropic semiconductor layered materials will also be presented and an application to superlattices will be explored. When possible, comparison with measurements from materials such as MgO, Al2O3, SnO2, SiO2 and the superlattice GaAs-InAs will be discussed.