Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Yanina G. Fedorenko; Mark A. Hughes; Julien L. Colaux; Chris Jeynes; Russell M. Gwilliam; Kevin P. Homewood; Jin Yao; Dan W. Hewak; Tae Hoon Lee; Stephen R. Elliott; B. Gholipour; Richard J. Curry

doi:10.1117/12.2037965

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux, Chris Jeynes, Russell M. Gwilliam, Kevin P. Homewood, Jin Yao, Dan W. Hewak, Tae Hoon Lee, Stephen R. Elliott, B. Gholipour, Richard J. Curry

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Conference contribution

Abstract

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.

Original language	English
Title of host publication	Optical Components and Materials XI
Publisher	SPIE
Volume	8982
ISBN (Print)	9780819498953
DOIs	https://doi.org/10.1117/12.2037965
Publication status	Published - 2014
Externally published	Yes
Event	Optical Components and Materials XI - San Francisco, CA, United States Duration: 3 Feb 2014 → 5 Feb 2014

Conference

Conference	Optical Components and Materials XI
Country/Territory	United States
City	San Francisco, CA
Period	3/02/14 → 5/02/14

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Fedorenko, Y. G., Hughes, M. A., Colaux, J. L., Jeynes, C., Gwilliam, R. M., Homewood, K. P., Yao, J., Hewak, D. W., Lee, T. H., Elliott, S. R., Gholipour, B., & Curry, R. J. (2014). Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation. In Optical Components and Materials XI (Vol. 8982). Article 898213 SPIE. https://doi.org/10.1117/12.2037965

@inproceedings{e64a59aa51a34fae953426af8c45e22b,

title = "Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation",

abstract = "Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.",

author = "Fedorenko, {Yanina G.} and Hughes, {Mark A.} and Colaux, {Julien L.} and Chris Jeynes and Gwilliam, {Russell M.} and Homewood, {Kevin P.} and Jin Yao and Hewak, {Dan W.} and Lee, {Tae Hoon} and Elliott, {Stephen R.} and B. Gholipour and Curry, {Richard J.}",

year = "2014",

doi = "10.1117/12.2037965",

language = "English",

isbn = "9780819498953",

volume = "8982",

booktitle = "Optical Components and Materials XI",

publisher = "SPIE",

note = "Optical Components and Materials XI ; Conference date: 03-02-2014 Through 05-02-2014",

}

Fedorenko, YG, Hughes, MA, Colaux, JL, Jeynes, C, Gwilliam, RM, Homewood, KP, Yao, J, Hewak, DW, Lee, TH, Elliott, SR, Gholipour, B & Curry, RJ 2014, Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation. in Optical Components and Materials XI. vol. 8982, 898213, SPIE, Optical Components and Materials XI, San Francisco, CA, United States, 3/02/14. https://doi.org/10.1117/12.2037965

TY - GEN

T1 - Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

AU - Fedorenko, Yanina G.

AU - Hughes, Mark A.

AU - Colaux, Julien L.

AU - Jeynes, Chris

AU - Gwilliam, Russell M.

AU - Homewood, Kevin P.

AU - Yao, Jin

AU - Hewak, Dan W.

AU - Lee, Tae Hoon

AU - Elliott, Stephen R.

AU - Gholipour, B.

AU - Curry, Richard J.

PY - 2014

Y1 - 2014

N2 - Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.

AB - Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.

UR - http://www.scopus.com/inward/record.url?scp=84901045262&partnerID=8YFLogxK

U2 - 10.1117/12.2037965

DO - 10.1117/12.2037965

M3 - Conference contribution

AN - SCOPUS:84901045262

SN - 9780819498953

VL - 8982

BT - Optical Components and Materials XI

PB - SPIE

T2 - Optical Components and Materials XI

Y2 - 3 February 2014 through 5 February 2014

ER -

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

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