Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux, Chris Jeynes, Russell M. Gwilliam, Kevin P. Homewood, Jin Yao, Dan W. Hewak, Tae Hoon Lee, Stephen R. Elliott, B. Gholipour, Richard J. Curry

Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

Abstract

Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ionbeam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silicon. This comes along with a gradual decrease in the resistivity and the thermopower coefficient. It is shown that conductivity in GeTe and Ge-Sb-Te films is consistent with the two-type carrier conduction model. It is anticipated that ion implantation renders electrons to become less localized than holes leading to electron conductivity in certain cases as, for example, in GeTe.

Original languageEnglish
Title of host publicationOptical Components and Materials XI
PublisherSPIE
Volume8982
ISBN (Print)9780819498953
DOIs
Publication statusPublished - 2014
Externally publishedYes
EventOptical Components and Materials XI - San Francisco, CA, United States
Duration: 3 Feb 20145 Feb 2014

Conference

ConferenceOptical Components and Materials XI
CountryUnited States
CitySan Francisco, CA
Period3/02/145/02/14

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