Direct growth of graphitic carbon on Si(111)

Trung Pham Thanh; Frédéric Joucken; Jessica Campos-Delgado; Jean-Pierre RASKIN; Benoit Hackens; Robert Sporken

doi:10.1063/1.4773989

Direct growth of graphitic carbon on Si(111)

Trung Pham Thanh, Frédéric Joucken, Jessica Campos-Delgado, Jean-Pierre RASKIN, Benoit Hackens, Robert Sporken

Faculty of Sciences

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	013118
Number of pages	4
Journal	Applied Physics Letters
Volume	102
DOIs	https://doi.org/10.1063/1.4773989
Publication status	Published - 2013

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10.1063/1.4773989

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@article{d25576126226438dafc62421cb14629e,

title = "Direct growth of graphitic carbon on Si(111)",

keywords = "Graphene, Silicon, STM",

author = "{Pham Thanh}, Trung and Fr{\'e}d{\'e}ric Joucken and Jessica Campos-Delgado and Jean-Pierre RASKIN and Benoit Hackens and Robert Sporken",

year = "2013",

doi = "10.1063/1.4773989",

language = "English",

volume = "102",

pages = "013118",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American institute of physics",

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T1 - Direct growth of graphitic carbon on Si(111)

AU - Pham Thanh, Trung

AU - Joucken, Frédéric

AU - Campos-Delgado, Jessica

AU - RASKIN, Jean-Pierre

AU - Hackens, Benoit

AU - Sporken, Robert

PY - 2013

Y1 - 2013

KW - Graphene, Silicon, STM

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U2 - 10.1063/1.4773989

DO - 10.1063/1.4773989

M3 - Article

SN - 0003-6951

VL - 102

SP - 013118

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Direct growth of graphitic carbon on Si(111)

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Morphology - Imaging

Scanning Tunneling Microscopy

Synthesis, Irradiation and Analysis of Materials (SIAM)

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Direct growth of graphitic carbon on Si(111)

Access to Document

Other files and links

Equipment

Morphology - Imaging

Scanning Tunneling Microscopy

Synthesis, Irradiation and Analysis of Materials (SIAM)

Cite this