Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11

Andrey Rybakov, Alexander Larin, Daniel P. Vercauteren, Georgii M. Zhidomirov

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Chapter (peer-reviewed) › peer-review

Original language	English
Title of host publication	Practical Aspects of Computational Chemistry IV
Editors	J. Leszczynski , M.K. Shukla
Place of Publication	New York
Publisher	Springer
Pages	303-351
Number of pages	48
ISBN (Electronic)	978-1-4899-7699-4
ISBN (Print)	978-1-4899-7697-0
Publication status	Published - 2016

PAI n°P7/05 - FS2: Functional Supramolecular Systems (FS2)
CHAMPAGNE, B. (CoI), De Vos, D. (PI), Van der Auweraer, M. (CoI), Jérôme, C. (CoI), Lazzaroni, R. (CoI), Marin, G. (CoI), Jonas, A. (CoI), Du Prez, F. (CoI), Vanderzande, D. (CoI), Van Tendeloo, G. (CoI), Van Speybroeck, V. (CoI), NENON, S. (Researcher) & STAELENS, N. (Researcher)
1/04/12 → 30/09/17
Project: Research
consortium des équipements de calcul intensif
Champagne, B. (CoI)
1/01/11 → 31/12/22
Project: Research

Cite this

@inbook{0046a6a6e30a441db1051096ec224e13,

title = "Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11",

author = "Andrey Rybakov and Alexander Larin and Vercauteren, {Daniel P.} and Zhidomirov, {Georgii M.}",

year = "2016",

language = "English",

isbn = "978-1-4899-7697-0",

pages = "303--351",

editor = "{Leszczynski }, J. and M.K. Shukla",

booktitle = "Practical Aspects of Computational Chemistry IV",

publisher = "Springer",

}

Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. / Rybakov, Andrey; Larin, Alexander; Vercauteren, Daniel P. et al.
Practical Aspects of Computational Chemistry IV. ed. / J. Leszczynski ; M.K. Shukla. New York: Springer, 2016. p. 303-351.

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Chapter (peer-reviewed) › peer-review

TY - CHAP

T1 - Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3

T2 - Chapitre 11

AU - Rybakov, Andrey

AU - Larin, Alexander

AU - Vercauteren, Daniel P.

AU - Zhidomirov, Georgii M.

PY - 2016

Y1 - 2016

M3 - Chapter (peer-reviewed)

SN - 978-1-4899-7697-0

SP - 303

EP - 351

BT - Practical Aspects of Computational Chemistry IV

A2 - Leszczynski , J.

A2 - Shukla, M.K.

PB - Springer

CY - New York

ER -