Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11

Andrey Rybakov, Alexander Larin, Daniel P. Vercauteren, Georgii M. Zhidomirov

Research output: Contribution in Book/Catalog/Report/Conference proceeding › Chapter (peer-reviewed)

Original languageEnglish
Title of host publicationPractical Aspects of Computational Chemistry IV
EditorsJ. Leszczynski , M.K. Shukla
Place of PublicationNew York
PublisherSpringer
Pages303-351
Number of pages48
ISBN (Electronic)978-1-4899-7699-4
ISBN (Print)978-1-4899-7697-0
Publication statusPublished - 2016

Projects

consortium des équipements de calcul intensif

CHAMPAGNE, B.

1/01/11 → 31/12/20

Project: Research

PAI n°P7/05 - FS2: Functional Supramolecular Systems (FS2)

CHAMPAGNE, B., De Vos, D., Van der Auweraer, M., Jérôme, C., Lazzaroni, R., Marin, G., Jonas, A., Du Prez, F., Vanderzande, D., Van Tendeloo, G., Van Speybroeck, V., NENON, S. & STAELENS, N.

1/04/12 → 30/09/17

Project: Research

Equipment

High Performance Computing Technology Platform

Benoît Champagne (Manager)

Technological Platform High Performance Computing

Facility/equipment: Technological Platform

    • Cite this

    Rybakov, A., Larin, A., Vercauteren, D. P., & Zhidomirov, G. M. (2016). Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. In J. Leszczynski , & M. K. Shukla (Eds.), Practical Aspects of Computational Chemistry IV (pp. 303-351). Springer.