Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11

Research output: Contribution in Book/Catalog/Report/Conference proceedingChapter (peer-reviewed)

Original languageEnglish
Title of host publicationPractical Aspects of Computational Chemistry IV
EditorsJ. Leszczynski , M.K. Shukla
Place of PublicationNew York
PublisherSpringer
Pages303-351
Number of pages48
ISBN (Electronic)978-1-4899-7699-4
ISBN (Print)978-1-4899-7697-0
Publication statusPublished - 2016

Cite this

Rybakov, A., Larin, A., Vercauteren, D. P., & Zhidomirov, G. M. (2016). Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. In J. Leszczynski , & M. K. Shukla (Eds.), Practical Aspects of Computational Chemistry IV (pp. 303-351). New York: Springer.
Rybakov, Andrey ; Larin, Alexander ; Vercauteren, Daniel P. ; Zhidomirov, Georgii M. / Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3 : Chapitre 11. Practical Aspects of Computational Chemistry IV. editor / J. Leszczynski ; M.K. Shukla. New York : Springer, 2016. pp. 303-351
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title = "Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11",
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Rybakov, A, Larin, A, Vercauteren, DP & Zhidomirov, GM 2016, Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. in J Leszczynski & MK Shukla (eds), Practical Aspects of Computational Chemistry IV. Springer, New York, pp. 303-351.

Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3 : Chapitre 11. / Rybakov, Andrey; Larin, Alexander; Vercauteren, Daniel P.; Zhidomirov, Georgii M.

Practical Aspects of Computational Chemistry IV. ed. / J. Leszczynski ; M.K. Shukla. New York : Springer, 2016. p. 303-351.

Research output: Contribution in Book/Catalog/Report/Conference proceedingChapter (peer-reviewed)

TY - CHAP

T1 - Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3

T2 - Chapitre 11

AU - Rybakov, Andrey

AU - Larin, Alexander

AU - Vercauteren, Daniel P.

AU - Zhidomirov, Georgii M.

PY - 2016

Y1 - 2016

M3 - Chapter (peer-reviewed)

SN - 978-1-4899-7697-0

SP - 303

EP - 351

BT - Practical Aspects of Computational Chemistry IV

A2 - Leszczynski , J.

A2 - Shukla, M.K.

PB - Springer

CY - New York

ER -

Rybakov A, Larin A, Vercauteren DP, Zhidomirov GM. Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. In Leszczynski J, Shukla MK, editors, Practical Aspects of Computational Chemistry IV. New York: Springer. 2016. p. 303-351