| Original language | English |
|---|---|
| Title of host publication | Practical Aspects of Computational Chemistry IV |
| Editors | J. Leszczynski , M.K. Shukla |
| Place of Publication | New York |
| Publisher | Springer |
| Pages | 303-351 |
| Number of pages | 48 |
| ISBN (Electronic) | 978-1-4899-7699-4 |
| ISBN (Print) | 978-1-4899-7697-0 |
| Publication status | Published - 2016 |
Cite this
Rybakov, A., Larin, A., Vercauteren, D. P., & Zhidomirov, G. M. (2016). Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. In J. Leszczynski , & M. K. Shukla (Eds.), Practical Aspects of Computational Chemistry IV (pp. 303-351). New York: Springer.
@inbook{0046a6a6e30a441db1051096ec224e13,
title = "Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11",
author = "Andrey Rybakov and Alexander Larin and Vercauteren, {Daniel P.} and Zhidomirov, {Georgii M.}",
year = "2016",
language = "English",
isbn = "978-1-4899-7697-0",
pages = "303--351",
editor = "{Leszczynski }, J. and M.K. Shukla",
booktitle = "Practical Aspects of Computational Chemistry IV",
publisher = "Springer",
}
Rybakov, A, Larin, A, Vercauteren, DP & Zhidomirov, GM 2016, Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. in J Leszczynski & MK Shukla (eds), Practical Aspects of Computational Chemistry IV. Springer, New York, pp. 303-351.
Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3 : Chapitre 11. / Rybakov, Andrey; Larin, Alexander; Vercauteren, Daniel P.; Zhidomirov, Georgii M.
Practical Aspects of Computational Chemistry IV. ed. / J. Leszczynski ; M.K. Shukla. New York : Springer, 2016. p. 303-351.Research output: Contribution in Book/Catalog/Report/Conference proceeding › Chapter (peer-reviewed)
TY - CHAP
T1 - Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3
T2 - Chapitre 11
AU - Rybakov, Andrey
AU - Larin, Alexander
AU - Vercauteren, Daniel P.
AU - Zhidomirov, Georgii M.
PY - 2016
Y1 - 2016
M3 - Chapter (peer-reviewed)
SN - 978-1-4899-7697-0
SP - 303
EP - 351
BT - Practical Aspects of Computational Chemistry IV
A2 - Leszczynski , J.
A2 - Shukla, M.K.
PB - Springer
CY - New York
ER -
Rybakov A, Larin A, Vercauteren DP, Zhidomirov GM. Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. In Leszczynski J, Shukla MK, editors, Practical Aspects of Computational Chemistry IV. New York: Springer. 2016. p. 303-351