Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11

Andrey Rybakov, Alexander Larin, Daniel P. Vercauteren, Georgii M. Zhidomirov

Research output: Contribution in Book/Catalog/Report/Conference proceedingChapter (peer-reviewed)

Original languageEnglish
Title of host publicationPractical Aspects of Computational Chemistry IV
EditorsJ. Leszczynski , M.K. Shukla
Place of PublicationNew York
PublisherSpringer
Pages303-351
Number of pages48
ISBN (Electronic)978-1-4899-7699-4
ISBN (Print)978-1-4899-7697-0
Publication statusPublished - 2016

Projects

PAI n°P7/05 - FS2: Functional Supramolecular Systems (FS2)

CHAMPAGNE, B., De Vos, D., Van der Auweraer, M., Jérôme, C., Lazzaroni, R., Marin, G., Jonas, A., Du Prez, F., Vanderzande, D., Van Tendeloo, G., Van Speybroeck, V., NENON, S. & STAELENS, N.

1/04/1230/09/17

Project: Research

Equipment

  • Cite this

    Rybakov, A., Larin, A., Vercauteren, D. P., & Zhidomirov, G. M. (2016). Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of γAl2O3: Chapitre 11. In J. Leszczynski , & M. K. Shukla (Eds.), Practical Aspects of Computational Chemistry IV (pp. 303-351). Springer.