Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene

Maxime Bayle, Nicolas Reckinger, Jean-Roch Huntzinger, Alexandre Felten, Ahmad Bakaraki, Périne Landois, Jean-François Colomer, Luc Henrard, Ahmed-Azmi Zahab, Jean-Louis Sauvajol, Matthieu Paillet

Research output: Contribution to journalArticle

Abstract

Few-layer graphene (FLG) samples prepared by two methods (chemical vapor deposition (CVD) followed by transfer onto SiO2/Si substrate and mechanical exfoliation) are characterized by combined optical contrast and micro-Raman mapping experiments. We examine the behavior of the integrated intensity ratio of the 2D and G bands (A2D/AG) and of the 2D band width (Γ2D) as a function of the number of layers (N). For our mechanically exfoliated FLG, A2D/AG decreases and Γ2D increases with N as expected for commensurately stacked FLG. For CVD FLG, both similar and opposite behaviors are observed and are ascribed to different stacking orders. For small (respectively, large) relative rotation angle between consecutive layers (θ), the values of the A2D/AG ratio is smaller (respectively, larger) and the 2D band is broader (respectively, narrower) than for single-layer graphene. Moreover, the A2D/AG ratio decreases (respectively, increases) and, conversely, Γ2D increases (respectively, decreases) as a function of N for small (respectively, large) θ. An intermediate behavior has also been found and is interpreted as the presence of both small and large θ within the studied area. These results confirm that neither A2D/AG nor Γ2D are definitive criteria to identify single-layer graphene, or to count N in FLG.

Original languageEnglish
Pages (from-to)2375-2379
Number of pages5
JournalPhysica Status Solidi b
Volume252
Issue number11
DOIs
Publication statusPublished - 1 Nov 2015

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Graphene
Raman scattering
graphene
Raman spectra
Chemical vapor deposition
vapor deposition
Bandwidth
Substrates
bandwidth

Keywords

  • 2D band
  • Few-layer graphene
  • Graphene
  • Optical contrast
  • Raman spectroscopy

Cite this

Bayle, Maxime ; Reckinger, Nicolas ; Huntzinger, Jean-Roch ; Felten, Alexandre ; Bakaraki, Ahmad ; Landois, Périne ; Colomer, Jean-François ; Henrard, Luc ; Zahab, Ahmed-Azmi ; Sauvajol, Jean-Louis ; Paillet, Matthieu. / Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene. In: Physica Status Solidi b. 2015 ; Vol. 252, No. 11. pp. 2375-2379.
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Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene. / Bayle, Maxime; Reckinger, Nicolas; Huntzinger, Jean-Roch; Felten, Alexandre; Bakaraki, Ahmad; Landois, Périne; Colomer, Jean-François; Henrard, Luc; Zahab, Ahmed-Azmi; Sauvajol, Jean-Louis; Paillet, Matthieu.

In: Physica Status Solidi b, Vol. 252, No. 11, 01.11.2015, p. 2375-2379.

Research output: Contribution to journalArticle

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T1 - Dependence of the Raman spectrum characteristics on the number of layers and stacking orientation in few-layer graphene

AU - Bayle, Maxime

AU - Reckinger, Nicolas

AU - Huntzinger, Jean-Roch

AU - Felten, Alexandre

AU - Bakaraki, Ahmad

AU - Landois, Périne

AU - Colomer, Jean-François

AU - Henrard, Luc

AU - Zahab, Ahmed-Azmi

AU - Sauvajol, Jean-Louis

AU - Paillet, Matthieu

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