Control of germanium diffusion using low quantities of co-implanted silicon isotopes

Chemistry

• Diffusion 100%
• Silicon 100%
• Raman Spectroscopy 100%
• Thermal Diffusion 100%
• Germanium 100%
• Atom 50%
• Surface 50%
• Reaction Mechanism 50%
• Concentration 50%
• Sample 50%
• Reaction Temperature 50%
• Phase Composition 50%
• Rutherford Backscattering Spectroscopy 50%
• Liquid Film 50%
• Nuclear Reaction 50%
• Implanted Ion 50%
• Annealing 50%
• Diffusion Coefficient 50%
• Reaction Stoichiometry 50%
• Silicon Oxide 50%

Material Science

• Thermal Diffusion 66%
• Surface 33%
• Oxide 33%
• Diffusivity 33%
• Temperature 33%
• Annealing 33%
• Nanocrystals 33%
• Aggregate 33%
• Film Growth 33%