Conduction band intersubband transitions in Ge/SiGe quantum wells

M. De Seta, G. Capellini, Y. Busby, F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, G. Pizzi, A. Nucara, S. Lupi

Research output: Contribution to journalArticlepeer-review


In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.

Original languageEnglish
Article number051918
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2009
Externally publishedYes


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