Compositional, structural, morphological, and optical properties of ZnO thin films prepared by PECVD technique

Noureddine Hacini, Mostefa Ghamnia, Mohamed Amine Dahamni, Abdelwaheb Boukhachem, Jean Jacques Pireaux, Laurent Houssiau

Research output: Contribution to journalArticlepeer-review


ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples were prepared at substrates temperatures of 200, 300, and 400C. The surface chemical composition was analyzed by the use of X-Ray Photoelectron spectroscopy (XPS). Structural and morphological properties were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical properties were carried out by UV-visible spectroscopy. XPS spectra showed typical peaks of Zn(2p3/2), Zn(2p1/2), and O(1s) of ZnO with a slight shift attributed to the substrate temperature. XRD analysis revealed hexagonal wurtzite phases with a preferred (002) growth orientation that improved with temperature. Calculation of grain size and dislocation density revealed the crystallization improvement of ZnO when the substrate temperature varied from 200 to 400C. SEM images of ZnO films showed textured surfaces composed of grains of spherical shape uniformly distributed. The transmittance yields are reaching 80%, and the values of the band-gap energy indicate that the ZnO films prepared by PECVD present transparent and semiconducting properties.

Original languageEnglish
Article number202
Pages (from-to)1-11
Number of pages11
Issue number2
Publication statusPublished - 10 Feb 2021


  • Grain size
  • Transmittance
  • XPS
  • ZnO


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