Complete minigaps for effective-mass carriers in three-dimensional semiconductor superlattices

Cecile Goffaux, Virginie Lousse, Jean-Pol Vigneron

Research output: Contribution to journalArticle

Abstract

This paper examines the possibility of obtaining complete gaps in the density of states of effective-mass carriers in a semiconductor, at the conduction or valence band fundamental edge. The dispersion relations are defined for waves associated with the effective-mass electrons or holes in a direct-gap material periodically modulated on a length scale significantly larger than the base crystal interatomic spacing. The specific case of cubic interacting quantum dots of Ga1−xAlxAs in a GaAs matrix is considered. A striking similarity between the effective-mass spectral density and the atomic gallium arsenide host electronic structure is found for an effective-mass superstructure derived from the zinc-blende crystal atomic arrangement. The charge carrier density has also been examined in order to shed some light on this strong similarity with atomic GaAs.
Original languageEnglish
Pages (from-to)7133-7137
Number of pages5
JournalPhysical Review. B, Condensed Matter and Materials Physics
Volume62
Issue number11
DOIs
Publication statusPublished - 2000

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