Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories

Yan Busby, Alexis Franquet, Valentina Spampinato, Giulia Casula, Annalisa Bonfiglio, Piero Cosseddu, Jean Jacques Pireaux, Laurent Houssiau

Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

Abstract

The resistive switching mechanism in organic and hybrid resistive memories has been intensively studied in the last years. A particular interest have been directed to solution processed resistive layers based on an organic or polymer compounds for which convincing direct and indirect evidences indicated that the switching mechanism is based on the formation of conductive filaments (CFs) bridging the two metal electrodes. However, the CF composition, formation and rupture dynamics and evolution during the prolonged cycling are still poorly explored. Experiments are rare because of the well-known challenges in characterizing nanoscale filaments. In this work, we combine time-of-flight secondary ion mass spectrometry (ToF-SIMS) 3D imaging and in-situ atomic force microscopy (AFM), acquired at different profile depths, to characterize the CF composition and dynamics in high-performance and environmental stable crossbar Ag/parylene C/Ag printed memories. The results allow characterizing the filaments composition, their formation mechanism by electrochemical metallization and their evolution upon cycling. Moreover, the AFM images allow for a more clear interpretation of ToF-SIMS 3D reconstructions of molecular ions and to highlight artifacts arising from the different sputtering rate of metals as compared to the organic material.

Original languageEnglish
Title of host publicationOrganic and Hybrid Sensors and Bioelectronics XI
EditorsIoannis Kymissis, Emil J. W. List-Kratochvil, Ruth Shinar, Luisa Torsi
PublisherSPIE
Volume10738
ISBN (Electronic)9781510620476
DOIs
Publication statusPublished - 1 Jan 2018
EventOrganic and Hybrid Sensors and Bioelectronics XI 2018 - San Diego, United States
Duration: 19 Aug 201822 Aug 2018

Conference

ConferenceOrganic and Hybrid Sensors and Bioelectronics XI 2018
CountryUnited States
CitySan Diego
Period19/08/1822/08/18

Fingerprint

Time-of-flight
Atomic Force Microscopy
Mass Spectrometry
Filament
Secondary ion mass spectrometry
secondary ion mass spectrometry
Atomic force microscopy
filaments
atomic force microscopy
Data storage equipment
Metals
Chemical analysis
Cycling
Metallizing
Sputtering
Polymers
3D Imaging
cycles
Ions
3D Reconstruction

Keywords

  • AFM
  • depth profiling
  • hybrid devices
  • Resistive switching
  • ToF-SIMS

Cite this

Busby, Y., Franquet, A., Spampinato, V., Casula, G., Bonfiglio, A., Cosseddu, P., ... Houssiau, L. (2018). Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories. In I. Kymissis, E. J. W. List-Kratochvil, R. Shinar, & L. Torsi (Eds.), Organic and Hybrid Sensors and Bioelectronics XI (Vol. 10738). [1073814] SPIE. https://doi.org/10.1117/12.2319923
Busby, Yan ; Franquet, Alexis ; Spampinato, Valentina ; Casula, Giulia ; Bonfiglio, Annalisa ; Cosseddu, Piero ; Pireaux, Jean Jacques ; Houssiau, Laurent. / Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories. Organic and Hybrid Sensors and Bioelectronics XI. editor / Ioannis Kymissis ; Emil J. W. List-Kratochvil ; Ruth Shinar ; Luisa Torsi. Vol. 10738 SPIE, 2018.
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Busby, Y, Franquet, A, Spampinato, V, Casula, G, Bonfiglio, A, Cosseddu, P, Pireaux, JJ & Houssiau, L 2018, Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories. in I Kymissis, EJW List-Kratochvil, R Shinar & L Torsi (eds), Organic and Hybrid Sensors and Bioelectronics XI. vol. 10738, 1073814, SPIE, Organic and Hybrid Sensors and Bioelectronics XI 2018, San Diego, United States, 19/08/18. https://doi.org/10.1117/12.2319923

Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories. / Busby, Yan; Franquet, Alexis; Spampinato, Valentina; Casula, Giulia; Bonfiglio, Annalisa; Cosseddu, Piero; Pireaux, Jean Jacques; Houssiau, Laurent.

Organic and Hybrid Sensors and Bioelectronics XI. ed. / Ioannis Kymissis; Emil J. W. List-Kratochvil; Ruth Shinar; Luisa Torsi. Vol. 10738 SPIE, 2018. 1073814.

Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

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T1 - Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories

AU - Busby, Yan

AU - Franquet, Alexis

AU - Spampinato, Valentina

AU - Casula, Giulia

AU - Bonfiglio, Annalisa

AU - Cosseddu, Piero

AU - Pireaux, Jean Jacques

AU - Houssiau, Laurent

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Y1 - 2018/1/1

N2 - The resistive switching mechanism in organic and hybrid resistive memories has been intensively studied in the last years. A particular interest have been directed to solution processed resistive layers based on an organic or polymer compounds for which convincing direct and indirect evidences indicated that the switching mechanism is based on the formation of conductive filaments (CFs) bridging the two metal electrodes. However, the CF composition, formation and rupture dynamics and evolution during the prolonged cycling are still poorly explored. Experiments are rare because of the well-known challenges in characterizing nanoscale filaments. In this work, we combine time-of-flight secondary ion mass spectrometry (ToF-SIMS) 3D imaging and in-situ atomic force microscopy (AFM), acquired at different profile depths, to characterize the CF composition and dynamics in high-performance and environmental stable crossbar Ag/parylene C/Ag printed memories. The results allow characterizing the filaments composition, their formation mechanism by electrochemical metallization and their evolution upon cycling. Moreover, the AFM images allow for a more clear interpretation of ToF-SIMS 3D reconstructions of molecular ions and to highlight artifacts arising from the different sputtering rate of metals as compared to the organic material.

AB - The resistive switching mechanism in organic and hybrid resistive memories has been intensively studied in the last years. A particular interest have been directed to solution processed resistive layers based on an organic or polymer compounds for which convincing direct and indirect evidences indicated that the switching mechanism is based on the formation of conductive filaments (CFs) bridging the two metal electrodes. However, the CF composition, formation and rupture dynamics and evolution during the prolonged cycling are still poorly explored. Experiments are rare because of the well-known challenges in characterizing nanoscale filaments. In this work, we combine time-of-flight secondary ion mass spectrometry (ToF-SIMS) 3D imaging and in-situ atomic force microscopy (AFM), acquired at different profile depths, to characterize the CF composition and dynamics in high-performance and environmental stable crossbar Ag/parylene C/Ag printed memories. The results allow characterizing the filaments composition, their formation mechanism by electrochemical metallization and their evolution upon cycling. Moreover, the AFM images allow for a more clear interpretation of ToF-SIMS 3D reconstructions of molecular ions and to highlight artifacts arising from the different sputtering rate of metals as compared to the organic material.

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M3 - Conference contribution

VL - 10738

BT - Organic and Hybrid Sensors and Bioelectronics XI

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A2 - List-Kratochvil, Emil J. W.

A2 - Shinar, Ruth

A2 - Torsi, Luisa

PB - SPIE

ER -

Busby Y, Franquet A, Spampinato V, Casula G, Bonfiglio A, Cosseddu P et al. Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories. In Kymissis I, List-Kratochvil EJW, Shinar R, Torsi L, editors, Organic and Hybrid Sensors and Bioelectronics XI. Vol. 10738. SPIE. 2018. 1073814 https://doi.org/10.1117/12.2319923