Co interaction on ZnO(000–1) investigated by scanning tunneling microscopy

Sébastien Couet; Thomas Seldrum; Robert Sporken; Jacques Dumont

doi:10.1007/s00339-007-3972-2

Co interaction on ZnO(000–1) investigated by scanning tunneling microscopy

Sébastien Couet, Thomas Seldrum, Robert Sporken, Jacques Dumont

Research output: Contribution to journal › Article

Abstract

The interaction of Co thin films on atomically flat ZnO(000–1) has been investigated by low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). A high density of islands nucleates at the earliest stages of the growth and a subsequent Wolmer–Weber growth of these islands is observed. Upon annealing at 600 °C, an atomically flat surface (Zn,Co)O(000–1) is restored due to the diffusion of the Co into the semiconductor.

Original language	English
Pages (from-to)	111-117
Number of pages	7
Journal	Applied physics. A: Materials science and processing
Volume	88
DOIs	https://doi.org/10.1007/s00339-007-3972-2
Publication status	Published - 2007

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10.1007/s00339-007-3972-2

Scanning Tunneling Microscopy
Sporken, R. (Manager)
Technological Platform Morphology - Imaging
Facility/equipment: Equipment
Synthesis, Irradiation and Analysis of Materials (SIAM)
Louette, P. (Manager), Colaux, J. (Manager), Felten, A. (Manager), Tabarrant, T. (Operator), COME, F. (Operator) & Debarsy, P.-L. (Manager)
Technological Platform Synthesis, Irradiation and Analysis of Materials
Facility/equipment: Technological Platform

Cite this

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title = "Co interaction on ZnO(000–1) investigated by scanning tunneling microscopy",

abstract = "The interaction of Co thin films on atomically flat ZnO(000–1) has been investigated by low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). A high density of islands nucleates at the earliest stages of the growth and a subsequent Wolmer–Weber growth of these islands is observed. Upon annealing at 600 °C, an atomically flat surface (Zn,Co)O(000–1) is restored due to the diffusion of the Co into the semiconductor. ",

author = "S{\'e}bastien Couet and Thomas Seldrum and Robert Sporken and Jacques Dumont",

year = "2007",

doi = "10.1007/s00339-007-3972-2",

language = "English",

volume = "88",

pages = "111--117",

journal = "Applied physics. A: Materials science and processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

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T1 - Co interaction on ZnO(000–1) investigated by scanning tunneling microscopy

AU - Couet, Sébastien

AU - Seldrum, Thomas

AU - Sporken, Robert

AU - Dumont, Jacques

PY - 2007

Y1 - 2007

N2 - The interaction of Co thin films on atomically flat ZnO(000–1) has been investigated by low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). A high density of islands nucleates at the earliest stages of the growth and a subsequent Wolmer–Weber growth of these islands is observed. Upon annealing at 600 °C, an atomically flat surface (Zn,Co)O(000–1) is restored due to the diffusion of the Co into the semiconductor.

AB - The interaction of Co thin films on atomically flat ZnO(000–1) has been investigated by low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). A high density of islands nucleates at the earliest stages of the growth and a subsequent Wolmer–Weber growth of these islands is observed. Upon annealing at 600 °C, an atomically flat surface (Zn,Co)O(000–1) is restored due to the diffusion of the Co into the semiconductor.

U2 - 10.1007/s00339-007-3972-2

DO - 10.1007/s00339-007-3972-2

M3 - Article

SN - 0947-8396

VL - 88

SP - 111

EP - 117

JO - Applied physics. A: Materials science and processing

JF - Applied physics. A: Materials science and processing

ER -

Co interaction on ZnO(000–1) investigated by scanning tunneling microscopy

Abstract

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Equipment

Scanning Tunneling Microscopy

Synthesis, Irradiation and Analysis of Materials (SIAM)

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