TY - JOUR
T1 - Charge Carriers in Few-Layer Graphene Films
AU - Latil, Sylvain
AU - Henrard, Luc
PY - 2006
Y1 - 2006
N2 - The nature of the charge carriers in 2D few-layer graphites (FLGs) has been recently questioned by transport measurements [K. S. Novoselov et al., Science 306, 666 (2004)] and a strong ambipolar electric field effect has been revealed. Our density functional calculations demonstrate that the electronic band dispersion near the Fermi level, and consequently the nature of the charge carriers, is highly sensitive to the number of layers and the stacking geometry. We show that the experimentally observed ambipolar transport is only possible for an FLG with a Bernal-like stacking pattern, whereas simple-carrier or semiconducting behavior is predicted for other geometries.
AB - The nature of the charge carriers in 2D few-layer graphites (FLGs) has been recently questioned by transport measurements [K. S. Novoselov et al., Science 306, 666 (2004)] and a strong ambipolar electric field effect has been revealed. Our density functional calculations demonstrate that the electronic band dispersion near the Fermi level, and consequently the nature of the charge carriers, is highly sensitive to the number of layers and the stacking geometry. We show that the experimentally observed ambipolar transport is only possible for an FLG with a Bernal-like stacking pattern, whereas simple-carrier or semiconducting behavior is predicted for other geometries.
U2 - 10.1103/PhysRevLett.97.036803
DO - 10.1103/PhysRevLett.97.036803
M3 - Article
SN - 0031-9007
VL - 97
JO - Physical review letters
JF - Physical review letters
IS - 3
ER -