Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz; J. Ratajczak; A. Czerwinski; J. Kâtcki; V. Srot; F. Phillipp; P.A. Van Aken; D. Yarekha; N. Reckinger; G. Larrieu; E. Dubois

doi:10.1088/1742-6596/209/1/012056

Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz, J. Ratajczak, A. Czerwinski, J. Kâtcki, V. Srot, F. Phillipp, P.A. Van Aken, D. Yarekha, N. Reckinger, G. Larrieu, E. Dubois

Research output: Contribution to journal › Meeting abstract › peer-review

Abstract

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type.

Original language	English
Journal	Journal of Physics : Conference Series
Volume	209
DOIs	https://doi.org/10.1088/1742-6596/209/1/012056
Publication status	Published - 1 Jan 2010

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title = "Characterization of ytterbium silicide formed in ultra high vacuum",

abstract = "The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type.",

author = "A. {\L}aszcz and J. Ratajczak and A. Czerwinski and J. K{\^a}tcki and V. Srot and F. Phillipp and {Van Aken}, P.A. and D. Yarekha and N. Reckinger and G. Larrieu and E. Dubois",

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doi = "10.1088/1742-6596/209/1/012056",

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TY - JOUR

T1 - Characterization of ytterbium silicide formed in ultra high vacuum

AU - Łaszcz, A.

AU - Ratajczak, J.

AU - Czerwinski, A.

AU - Kâtcki, J.

AU - Srot, V.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Yarekha, D.

AU - Reckinger, N.

AU - Larrieu, G.

AU - Dubois, E.

PY - 2010/1/1

Y1 - 2010/1/1

N2 - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type.

AB - The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type.

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U2 - 10.1088/1742-6596/209/1/012056

DO - 10.1088/1742-6596/209/1/012056

M3 - Meeting abstract

AN - SCOPUS:77950499288

SN - 1742-6588

VL - 209

JO - Journal of Physics : Conference Series

JF - Journal of Physics : Conference Series

ER -

Characterization of ytterbium silicide formed in ultra high vacuum

Abstract

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