Characterization of ytterbium silicide formed in ultra high vacuum

A. Laszcz; J. Ratajczak; A. Czerwinski; J. Katcki; V. Srot; F. Phillipp; P.A. Van Aken; D.A. Yarekha; Nicolas Reckinger; G. Larrieu; E. Dubois

Characterization of ytterbium silicide formed in ultra high vacuum

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, F. Phillipp, P.A. Van Aken, D.A. Yarekha, Nicolas Reckinger, G. Larrieu, E. Dubois

Research output: Contribution to conference › Abstract › peer-review

Original language	English
Publication status	Published - 2009
Event	16th Conference on Microscopy of Semiconducting Material - Oxford, United Kingdom Duration: 17 Mar 2009 → 20 Mar 2009

Conference

Conference	16th Conference on Microscopy of Semiconducting Material
Country/Territory	United Kingdom
City	Oxford
Period	17/03/09 → 20/03/09

Cite this

@conference{4b78cfe2299b4789b1b22b9cd99e3e29,

title = "Characterization of ytterbium silicide formed in ultra high vacuum",

author = "A. Laszcz and J. Ratajczak and A. Czerwinski and J. Katcki and V. Srot and F. Phillipp and \{Van Aken\}, P.A. and D.A. Yarekha and Nicolas Reckinger and G. Larrieu and E. Dubois",

year = "2009",

language = "English",

note = "16th Conference on Microscopy of Semiconducting Material ; Conference date: 17-03-2009 Through 20-03-2009",

}

TY - CONF

T1 - Characterization of ytterbium silicide formed in ultra high vacuum

AU - Laszcz, A.

AU - Ratajczak, J.

AU - Czerwinski, A.

AU - Katcki, J.

AU - Srot, V.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Yarekha, D.A.

AU - Reckinger, Nicolas

AU - Larrieu, G.

AU - Dubois, E.

PY - 2009

Y1 - 2009

M3 - Abstract

T2 - 16th Conference on Microscopy of Semiconducting Material

Y2 - 17 March 2009 through 20 March 2009

ER -