Characterization of ytterbium silicide formed in ultra high vacuum

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, V. Srot, F. Phillipp, P.A. Van Aken, D.A. Yarekha, Nicolas Reckinger, G. Larrieu, E. Dubois

Research output: Contribution to conferenceAbstract

Conference

Conference16th Conference on Microscopy of Semiconducting Material
CountryUnited Kingdom
CityOxford
Period17/03/0920/03/09

Cite this

Laszcz, A., Ratajczak, J., Czerwinski, A., Katcki, J., Srot, V., Phillipp, F., ... Dubois, E. (2009). Characterization of ytterbium silicide formed in ultra high vacuum. Abstract from 16th Conference on Microscopy of Semiconducting Material, Oxford, United Kingdom.
Laszcz, A. ; Ratajczak, J. ; Czerwinski, A. ; Katcki, J. ; Srot, V. ; Phillipp, F. ; Van Aken, P.A. ; Yarekha, D.A. ; Reckinger, Nicolas ; Larrieu, G. ; Dubois, E. / Characterization of ytterbium silicide formed in ultra high vacuum. Abstract from 16th Conference on Microscopy of Semiconducting Material, Oxford, United Kingdom.
@conference{4b78cfe2299b4789b1b22b9cd99e3e29,
title = "Characterization of ytterbium silicide formed in ultra high vacuum",
author = "A. Laszcz and J. Ratajczak and A. Czerwinski and J. Katcki and V. Srot and F. Phillipp and {Van Aken}, P.A. and D.A. Yarekha and Nicolas Reckinger and G. Larrieu and E. Dubois",
year = "2009",
language = "English",
note = "16th Conference on Microscopy of Semiconducting Material ; Conference date: 17-03-2009 Through 20-03-2009",

}

Laszcz, A, Ratajczak, J, Czerwinski, A, Katcki, J, Srot, V, Phillipp, F, Van Aken, PA, Yarekha, DA, Reckinger, N, Larrieu, G & Dubois, E 2009, 'Characterization of ytterbium silicide formed in ultra high vacuum' 16th Conference on Microscopy of Semiconducting Material, Oxford, United Kingdom, 17/03/09 - 20/03/09, .

Characterization of ytterbium silicide formed in ultra high vacuum. / Laszcz, A.; Ratajczak, J.; Czerwinski, A.; Katcki, J.; Srot, V.; Phillipp, F.; Van Aken, P.A.; Yarekha, D.A.; Reckinger, Nicolas; Larrieu, G.; Dubois, E.

2009. Abstract from 16th Conference on Microscopy of Semiconducting Material, Oxford, United Kingdom.

Research output: Contribution to conferenceAbstract

TY - CONF

T1 - Characterization of ytterbium silicide formed in ultra high vacuum

AU - Laszcz, A.

AU - Ratajczak, J.

AU - Czerwinski, A.

AU - Katcki, J.

AU - Srot, V.

AU - Phillipp, F.

AU - Van Aken, P.A.

AU - Yarekha, D.A.

AU - Reckinger, Nicolas

AU - Larrieu, G.

AU - Dubois, E.

PY - 2009

Y1 - 2009

M3 - Abstract

ER -

Laszcz A, Ratajczak J, Czerwinski A, Katcki J, Srot V, Phillipp F et al. Characterization of ytterbium silicide formed in ultra high vacuum. 2009. Abstract from 16th Conference on Microscopy of Semiconducting Material, Oxford, United Kingdom.