Characterization of ytterbium silicide formed in ultra high vacuum

A. Łaszcz, J. Ratajczak, A. Czerwinski, J. Kâtcki, V. Srot, F. Phillipp, P.A. Van Aken, D. Yarekha, N. Reckinger, G. Larrieu, E. Dubois

    Research output: Contribution in Book/Catalog/Report/Conference proceedingConference contribution

    Abstract

    The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi phase, however, the structure is different from the hexagonal AlB type. © 2010 IOP Publishing Ltd.
    Original languageEnglish
    Title of host publicationJournal of Physics : Conference Series
    Volume209
    DOIs
    Publication statusPublished - 1 Jan 2010

    Fingerprint

    Dive into the research topics of 'Characterization of ytterbium silicide formed in ultra high vacuum'. Together they form a unique fingerprint.

    Cite this