C60 growth on Si(100), GaSe(0001) and GeS(001): Influence of the substrate on the film crystallinity

Georg Gensterblum; Li Ming Luo Yu; Jean-Jacques Pireaux; Paul Thiry; Roland Caudano; Jean Marc Themlin; Saidi Bouzidi; François COLETTI; Jean-Marie DEBEVER

doi:10.1007/BF00539471

C60 growth on Si(100), GaSe(0001) and GeS(001): Influence of the substrate on the film crystallinity

Georg Gensterblum, Li Ming Luo Yu, Jean-Jacques Pireaux, Paul Thiry, Roland Caudano, Jean Marc Themlin, Saidi Bouzidi, François COLETTI, Jean-Marie DEBEVER

Namur Research Institute for Life Sciences

Research output: Contribution to journal › Article

Abstract

C60 films have been grown in ultra high vacuum on various crystalline substrates and the structure of the films has been investigated by low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The C60 films form randomly oriented nanocrystals on Si(100), mesoscopic polycrystals on GaSe(0001) and microscopic single crystals on GeS(001). The vibrational structure of the C60/substrate interfaces is analyzed in detail by HREELS carried out in the dipole and impact scattering regimes. It is shown that the epitaxy of C60 on GeS(001) is induced by the weak van der Waals bonding and the peculiar corrugation of the substrate surface.

Original language	English
Pages (from-to)	175-183
Number of pages	9
Journal	Applied physics. A: Solids and surfaces
Volume	56
Issue number	3
DOIs	https://doi.org/10.1007/BF00539471
Publication status	Published - 1993

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@article{816b30bf883d4afbaf1a64aaaa942a1f,

title = "C60 growth on Si(100), GaSe(0001) and GeS(001): Influence of the substrate on the film crystallinity",

abstract = "C60 films have been grown in ultra high vacuum on various crystalline substrates and the structure of the films has been investigated by low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The C60 films form randomly oriented nanocrystals on Si(100), mesoscopic polycrystals on GaSe(0001) and microscopic single crystals on GeS(001). The vibrational structure of the C60/substrate interfaces is analyzed in detail by HREELS carried out in the dipole and impact scattering regimes. It is shown that the epitaxy of C60 on GeS(001) is induced by the weak van der Waals bonding and the peculiar corrugation of the substrate surface.",

author = "Georg Gensterblum and Yu, {Li Ming Luo} and Jean-Jacques Pireaux and Paul Thiry and Roland Caudano and Themlin, {Jean Marc} and Saidi Bouzidi and Fran{\c c}ois COLETTI and Jean-Marie DEBEVER",

year = "1993",

doi = "10.1007/BF00539471",

language = "English",

volume = "56",

pages = "175--183",

journal = "Applied physics. A: Solids and surfaces",

issn = "0721-7250",

publisher = "Springer Verlag",

number = "3",

}

TY - JOUR

T1 - C60 growth on Si(100), GaSe(0001) and GeS(001)

T2 - Influence of the substrate on the film crystallinity

AU - Gensterblum, Georg

AU - Yu, Li Ming Luo

AU - Pireaux, Jean-Jacques

AU - Thiry, Paul

AU - Caudano, Roland

AU - Themlin, Jean Marc

AU - Bouzidi, Saidi

AU - COLETTI, François

AU - DEBEVER, Jean-Marie

PY - 1993

Y1 - 1993

N2 - C60 films have been grown in ultra high vacuum on various crystalline substrates and the structure of the films has been investigated by low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The C60 films form randomly oriented nanocrystals on Si(100), mesoscopic polycrystals on GaSe(0001) and microscopic single crystals on GeS(001). The vibrational structure of the C60/substrate interfaces is analyzed in detail by HREELS carried out in the dipole and impact scattering regimes. It is shown that the epitaxy of C60 on GeS(001) is induced by the weak van der Waals bonding and the peculiar corrugation of the substrate surface.

AB - C60 films have been grown in ultra high vacuum on various crystalline substrates and the structure of the films has been investigated by low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The C60 films form randomly oriented nanocrystals on Si(100), mesoscopic polycrystals on GaSe(0001) and microscopic single crystals on GeS(001). The vibrational structure of the C60/substrate interfaces is analyzed in detail by HREELS carried out in the dipole and impact scattering regimes. It is shown that the epitaxy of C60 on GeS(001) is induced by the weak van der Waals bonding and the peculiar corrugation of the substrate surface.

U2 - 10.1007/BF00539471

DO - 10.1007/BF00539471

M3 - Article

SN - 0721-7250

VL - 56

SP - 175

EP - 183

JO - Applied physics. A: Solids and surfaces

JF - Applied physics. A: Solids and surfaces

IS - 3

ER -

C60 growth on Si(100), GaSe(0001) and GeS(001): Influence of the substrate on the film crystallinity

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