Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier

D. Barba, C. Wang, A. Nélis, G. Terwagne, F. Rosei

Research output: Contribution to journalArticle

Abstract

We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.

Original languageEnglish
Article number161540
Number of pages6
JournalJournal of Applied Physics
Volume123
Issue number16
DOIs
Publication statusPublished - 28 Apr 2018

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germanium
nanocrystals
silicon dioxide
silicon
outgassing
thermal diffusion
crystal defects
point defects
crystallinity
implantation
spatial distribution
nucleation
electron energy
transmission electron microscopy
annealing
high resolution
spectroscopy
atoms
ions

Cite this

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abstract = "We investigate the effect of co-implanting a silicon sublayer on the thermal diffusion of germanium ions implanted into SiO2 and the growth of Ge nanocrystals (Ge-ncs). High-resolution imaging obtained by transmission electron microscopy and energy dispersive spectroscopy measurements supported by Monte-Carlo calculations shows that the Si-enriched region acts as a diffusion barrier for Ge atoms. This barrier prevents Ge outgassing during thermal annealing at 1100 °C. Both the localization and the reduced size of Ge-ncs formed within the sample region co-implanted with Si are observed, as well as the nucleation of mixed Ge/Si nanocrystals containing structural point defects and stacking faults. Although it was found that the Si co-implantation affects the crystallinity of the formed Ge-ncs, this technique can be implemented to produce size-selective and depth-ordered nanostructured systems by controlling the spatial distribution of diffusing Ge. We illustrate this feature for Ge-ncs embedded within a single SiO2 monolayer, whose diameters were gradually increased from 1 nm to 5 nm over a depth of 100 nm.",
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Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier. / Barba, D.; Wang, C.; Nélis, A.; Terwagne, G.; Rosei, F.

In: Journal of Applied Physics, Vol. 123, No. 16, 161540, 28.04.2018.

Research output: Contribution to journalArticle

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T1 - Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier

AU - Barba, D.

AU - Wang, C.

AU - Nélis, A.

AU - Terwagne, G.

AU - Rosei, F.

PY - 2018/4/28

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