Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM

Y. Xin; N.D. Browning; S.J. Pennycook; Sivalingam Sivananthan; Robert Sporken; F Omnés; B. Beaumont; J.P. Faurie; P. Gibart

Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM

Y. Xin, N.D. Browning, S.J. Pennycook, Sivalingam Sivananthan, Robert Sporken, F Omnés, B. Beaumont, J.P. Faurie, P. Gibart

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1081
Journal	Journal of Electronic Materials
Volume	28
Issue number	7
Publication status	Published - 1999

Cite this

@article{7e75d2c0f5de48a28459335f07d6a948,

title = "Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM",

author = "Y. Xin and N.D. Browning and S.J. Pennycook and Sivalingam Sivananthan and Robert Sporken and F Omn{\'e}s and B. Beaumont and J.P. Faurie and P. Gibart",

year = "1999",

language = "English",

volume = "28",

pages = "1081",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "7",

}

TY - JOUR

T1 - Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM

AU - Xin, Y.

AU - Browning, N.D.

AU - Pennycook, S.J.

AU - Sivananthan, Sivalingam

AU - Sporken, Robert

AU - Omnés, F

AU - Beaumont, B.

AU - Faurie, J.P.

AU - Gibart, P.

PY - 1999

Y1 - 1999

M3 - Article

SN - 0361-5235

VL - 28

SP - 1081

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -