Application of Rubrene Air-Gap Transistors as Sensitive MEMS Physical Sensors

Marco J. Pereira; Micaela Matta; Lionel Hirsch; Isabelle Dufour; Alejandro Briseno; Sai Manoj Gali; Yoann Olivier; Luca Muccioli; Alfred Crosby; Cédric Ayela; Guillaume Wantz

doi:10.1021/acsami.8b15319

Application of Rubrene Air-Gap Transistors as Sensitive MEMS Physical Sensors

Marco J. Pereira, Micaela Matta, Lionel Hirsch, Isabelle Dufour, Alejandro Briseno, Sai Manoj Gali, Yoann Olivier, Luca Muccioli, Alfred Crosby, Cédric Ayela, Guillaume Wantz

Research output: Contribution to journal › Article › peer-review

Abstract

Micro-electromechanical systems (MEMS) made of organic materials have attracted efforts for the development a new generation of physical, chemical, and biological sensors, for which the electromechanical sensitivity is the current major concern. Here, we present an organic MEMS made of a rubrene single-crystal air-gap transistor. Applying mechanical pressure on the semiconductor results in high variations in drain current: an unparalleled gauge factor above 4000 has been measured experimentally. Such a high sensitivity is induced by the modulation of charge injection at the interface between the gold electrode and the rubrene semiconductor as an unusual transducing effect. Applying these devices to the detection of acoustic pressure shows that force down to 230 nN can be measured with a resolution of 40 nN. This study demonstrates that MEMS based on rubrene air-gap transistors constitute a step forward in the development of high-performance flexible sensors.

Original language	English
Pages (from-to)	41570-41577
Number of pages	8
Journal	ACS Applied Materials & Interfaces
Volume	10
Issue number	48
DOIs	https://doi.org/10.1021/acsami.8b15319
Publication status	Published - 5 Dec 2018
Externally published	Yes

Funding

The collaboration between the University of Bordeaux and the University of Massachusetts and the research activities of M.J.P., M.M., S.M.G., and L.M. were supported by the LabEx AMADEus (ANR-10-LABX-42) in the framework of IdEx Bordeaux (ANR-10-IDEX-03-02), i.e., the Investissements d’Avenir programme of the French government managed by the Agence Nationale de la Recherche.

Funders	Funder number
IdEx Bordeaux	ANR-10-IDEX-03-02
University of Massachusetts
Agence Nationale de la Recherche
Université Montesquieu-Bordeaux IV
LabEx ASLAN	ANR-10-LABX-42

Keywords

air-gap transistor
charge injection
crystal
organic field-effect transistor (OFET)
organic MEMS
pressure sensor
rubrene

Access to Document

10.1021/acsami.8b15319

Cite this

@article{c2f0f7d1f250461cb0a447a39727ebd2,

title = "Application of Rubrene Air-Gap Transistors as Sensitive MEMS Physical Sensors",

abstract = "Micro-electromechanical systems (MEMS) made of organic materials have attracted efforts for the development a new generation of physical, chemical, and biological sensors, for which the electromechanical sensitivity is the current major concern. Here, we present an organic MEMS made of a rubrene single-crystal air-gap transistor. Applying mechanical pressure on the semiconductor results in high variations in drain current: an unparalleled gauge factor above 4000 has been measured experimentally. Such a high sensitivity is induced by the modulation of charge injection at the interface between the gold electrode and the rubrene semiconductor as an unusual transducing effect. Applying these devices to the detection of acoustic pressure shows that force down to 230 nN can be measured with a resolution of 40 nN. This study demonstrates that MEMS based on rubrene air-gap transistors constitute a step forward in the development of high-performance flexible sensors.",

keywords = "air-gap transistor, charge injection, crystal, organic field-effect transistor (OFET), organic MEMS, pressure sensor, rubrene",

author = "Pereira, \{Marco J.\} and Micaela Matta and Lionel Hirsch and Isabelle Dufour and Alejandro Briseno and Gali, \{Sai Manoj\} and Yoann Olivier and Luca Muccioli and Alfred Crosby and C{\'e}dric Ayela and Guillaume Wantz",

year = "2018",

month = dec,

day = "5",

doi = "10.1021/acsami.8b15319",

language = "English",

volume = "10",

pages = "41570--41577",

journal = "ACS Applied Materials \& Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "48",

}

TY - JOUR

T1 - Application of Rubrene Air-Gap Transistors as Sensitive MEMS Physical Sensors

AU - Pereira, Marco J.

AU - Matta, Micaela

AU - Hirsch, Lionel

AU - Dufour, Isabelle

AU - Briseno, Alejandro

AU - Gali, Sai Manoj

AU - Olivier, Yoann

AU - Muccioli, Luca

AU - Crosby, Alfred

AU - Ayela, Cédric

AU - Wantz, Guillaume

PY - 2018/12/5

Y1 - 2018/12/5

N2 - Micro-electromechanical systems (MEMS) made of organic materials have attracted efforts for the development a new generation of physical, chemical, and biological sensors, for which the electromechanical sensitivity is the current major concern. Here, we present an organic MEMS made of a rubrene single-crystal air-gap transistor. Applying mechanical pressure on the semiconductor results in high variations in drain current: an unparalleled gauge factor above 4000 has been measured experimentally. Such a high sensitivity is induced by the modulation of charge injection at the interface between the gold electrode and the rubrene semiconductor as an unusual transducing effect. Applying these devices to the detection of acoustic pressure shows that force down to 230 nN can be measured with a resolution of 40 nN. This study demonstrates that MEMS based on rubrene air-gap transistors constitute a step forward in the development of high-performance flexible sensors.

AB - Micro-electromechanical systems (MEMS) made of organic materials have attracted efforts for the development a new generation of physical, chemical, and biological sensors, for which the electromechanical sensitivity is the current major concern. Here, we present an organic MEMS made of a rubrene single-crystal air-gap transistor. Applying mechanical pressure on the semiconductor results in high variations in drain current: an unparalleled gauge factor above 4000 has been measured experimentally. Such a high sensitivity is induced by the modulation of charge injection at the interface between the gold electrode and the rubrene semiconductor as an unusual transducing effect. Applying these devices to the detection of acoustic pressure shows that force down to 230 nN can be measured with a resolution of 40 nN. This study demonstrates that MEMS based on rubrene air-gap transistors constitute a step forward in the development of high-performance flexible sensors.

KW - air-gap transistor

KW - charge injection

KW - crystal

KW - organic field-effect transistor (OFET)

KW - organic MEMS

KW - pressure sensor

KW - rubrene

UR - https://www.scopus.com/pages/publications/85056839069

U2 - 10.1021/acsami.8b15319

DO - 10.1021/acsami.8b15319

M3 - Article

C2 - 30398330

AN - SCOPUS:85056839069

SN - 1944-8244

VL - 10

SP - 41570

EP - 41577

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

IS - 48

ER -

Application of Rubrene Air-Gap Transistors as Sensitive MEMS Physical Sensors

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this